WMT04N10TS Datasheet and Replacement
Type Designator: WMT04N10TS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: SOT223
WMT04N10TS substitution
WMT04N10TS Datasheet (PDF)
wmt04n10ts.pdf

WMT04N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMT04N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 3.5A DS DR
wmt04p06ts.pdf

WMT04P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMT04P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = -60V, I = -3.8A DS DR
wmt04p10ts.pdf

WMT04P10TS 100V P-Channel Enhancement Mode Power MOSFET DescriptionWMT04P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = -100V, I = -3.6A DS DR
Datasheet: WMS15N03T1 , WMS15P02T1 , WMS175DN10LG4 , WMS175N10HG4 , WMS175N10LG4 , WMS17P03TS , WMS240N10LG2 , WMS690N15HG2 , RFP50N06 , WMT04P06TS , WMT04P10TS , WMT05N10T1 , WMT05N12TS , WMT07N03T1 , WMT07N06TS , WMT07N10TS , WMU080N10HG2 .
History: NCE3401AY | IRLU7833PBF | SIHD4N80E | KIA75NF75 | IRHYB597Z30CM | HSM4094 | IRFR3706CPBF
Keywords - WMT04N10TS MOSFET datasheet
WMT04N10TS cross reference
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WMT04N10TS replacement
History: NCE3401AY | IRLU7833PBF | SIHD4N80E | KIA75NF75 | IRHYB597Z30CM | HSM4094 | IRFR3706CPBF



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