All MOSFET. WMT04N10TS Datasheet

 

WMT04N10TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMT04N10TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 3.1 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
   Maximum Drain Current |Id|: 3.5 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 4 nC
   Rise Time (tr): 19 nS
   Drain-Source Capacitance (Cd): 30 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm
   Package: SOT223

 WMT04N10TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMT04N10TS Datasheet (PDF)

 ..1. Size:981K  way-on
wmt04n10ts.pdf

WMT04N10TS
WMT04N10TS

WMT04N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMT04N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 3.5A DS DR

 9.1. Size:673K  way-on
wmt04p06ts.pdf

WMT04N10TS
WMT04N10TS

WMT04P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMT04P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = -60V, I = -3.8A DS DR

 9.2. Size:1003K  way-on
wmt04p10ts.pdf

WMT04N10TS
WMT04N10TS

WMT04P10TS 100V P-Channel Enhancement Mode Power MOSFET DescriptionWMT04P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = -100V, I = -3.6A DS DR

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFZ48N , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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