All MOSFET. WMT04N10TS Datasheet

 

WMT04N10TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMT04N10TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SOT223

 WMT04N10TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMT04N10TS Datasheet (PDF)

 ..1. Size:981K  way-on
 wmt04n10ts.pdf

WMT04N10TS WMT04N10TS

WMT04N10TS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMT04N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 3.5A DS DR

 9.1. Size:673K  way-on
 wmt04p06ts.pdf

WMT04N10TS WMT04N10TS

WMT04P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMT04P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = -60V, I = -3.8A DS DR

 9.2. Size:1003K  way-on
 wmt04p10ts.pdf

WMT04N10TS WMT04N10TS

WMT04P10TS 100V P-Channel Enhancement Mode Power MOSFET DescriptionWMT04P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = -100V, I = -3.6A DS DR

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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