WMT04N10TS PDF and Equivalents Search

 

WMT04N10TS Specs and Replacement

Type Designator: WMT04N10TS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 30 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: SOT223

WMT04N10TS substitution

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WMT04N10TS datasheet

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WMT04N10TS

WMT04N10TS 100V N-Channel Enhancement Mode Power MOSFET Description WMT04N10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = 100V, I = 3.5A DS D R ... See More ⇒

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WMT04N10TS

WMT04P06TS 60V P-Channel Enhancement Mode Power MOSFET Description WMT04P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = -60V, I = -3.8A DS D R ... See More ⇒

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WMT04N10TS

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Detailed specifications: WMS15N03T1 , WMS15P02T1 , WMS175DN10LG4 , WMS175N10HG4 , WMS175N10LG4 , WMS17P03TS , WMS240N10LG2 , WMS690N15HG2 , AON7410 , WMT04P06TS , WMT04P10TS , WMT05N10T1 , WMT05N12TS , WMT07N03T1 , WMT07N06TS , WMT07N10TS , WMU080N10HG2 .

Keywords - WMT04N10TS MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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