FDS4559F085 Todos los transistores

 

FDS4559F085 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS4559F085

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm

Encapsulados: SO-8

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FDS4559F085 datasheet

 7.1. Size:380K  fairchild semi
 fds4559 f085.pdf pdf_icon

FDS4559F085

October 2008 tm FDS4559_F085 60V Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using Q1 N-Channel Fairchild s advanced PowerTrench process that has 4.5 A, 60 V RDS(on) = 55 m @ VGS = 10V been especially tailored to minimize the on-state resistance and yet maintain low gate charge for RD

 7.2. Size:147K  fairchild semi
 fds4559.pdf pdf_icon

FDS4559F085

April 2002 FDS4559 60V Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using Q1 N-Channel Fairchild s advanced PowerTrench process that has 4.5 A, 60 V RDS(on) = 55 m @ VGS = 10V been especially tailored to minimize the on-state resistance and yet maintain low gate charge for RDS(on) = 75 m

 7.3. Size:288K  onsemi
 fds4559.pdf pdf_icon

FDS4559F085

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MOSTRAR MÁS

Otros transistores... FDS4470 , FDS4488 , STD12L01 , FDS4501H , STB458D , STB440S , FDS4559 , STB438S , 2N60 , STB438A , FDS4672A , FDS4675F085 , FDS4685 , FDS4897AC , STB434S , FDS4897C , STB432S .

 

 

 

 

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