FDS4559F085 Todos los transistores

 

FDS4559F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDS4559F085
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 12.5 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: SO-8

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FDS4559F085 Datasheet (PDF)

 7.1. Size:380K  fairchild semi
fds4559 f085.pdf

FDS4559F085 FDS4559F085

October 2008 tmFDS4559_F085 60V Complementary PowerTrenchMOSFET General Description Features This complementary MOSFET device is produced using Q1: N-Channel Fairchilds advanced PowerTrench process that has 4.5 A, 60 V RDS(on) = 55 m @ VGS = 10V been especially tailored to minimize the on-state resistance and yet maintain low gate charge for RD

 7.2. Size:147K  fairchild semi
fds4559.pdf

FDS4559F085 FDS4559F085

April 2002 FDS4559 60V Complementary PowerTrenchMOSFET General Description Features This complementary MOSFET device is produced using Q1: N-Channel Fairchilds advanced PowerTrench process that has 4.5 A, 60 V RDS(on) = 55 m @ VGS = 10V been especially tailored to minimize the on-state resistance and yet maintain low gate charge for RDS(on) = 75 m

 7.3. Size:288K  onsemi
fds4559.pdf

FDS4559F085 FDS4559F085

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Otros transistores... FDS4470 , FDS4488 , STD12L01 , FDS4501H , STB458D , STB440S , FDS4559 , STB438S , 8205A , STB438A , FDS4672A , FDS4675F085 , FDS4685 , FDS4897AC , STB434S , FDS4897C , STB432S .

 

 
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