FDS4559F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDS4559F085
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: SO-8

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FDS4559F085 Datasheet (PDF)

7.1. Size:380K fairchild semi
fds4559 f085.pdf

October 2008 tmFDS4559_F085 60V Complementary PowerTrenchMOSFET General Description Features This complementary MOSFET device is produced using Q1: N-Channel Fairchilds advanced PowerTrench process that has 4.5 A, 60 V RDS(on) = 55 m @ VGS = 10V been especially tailored to minimize the on-state resistance and yet maintain low gate charge for RD

7.2. Size:147K fairchild semi
fds4559.pdf

April 2002 FDS4559 60V Complementary PowerTrenchMOSFET General Description Features This complementary MOSFET device is produced using Q1: N-Channel Fairchilds advanced PowerTrench process that has 4.5 A, 60 V RDS(on) = 55 m @ VGS = 10V been especially tailored to minimize the on-state resistance and yet maintain low gate charge for RDS(on) = 75 m

7.3. Size:288K onsemi
fds4559.pdf

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