FDS4559F085 MOSFET Datasheet: NP-Ch, 60V, 4.5A. Full specification with pinout and replacement list

FDS4559F085 Specs and Replacement

Type Designator: FDS4559F085

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SO-8

FDS4559F085 substitution

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FDS4559F085 datasheet

7.1. Size:380K fairchild semi
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October 2008 tm FDS4559_F085 60V Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using Q1 N-Channel Fairchild s advanced PowerTrench process that has 4.5 A, 60 V RDS(on) = 55 m @ VGS = 10V been especially tailored to minimize the on-state resistance and yet maintain low gate charge for RD... See More ⇒

7.2. Size:147K fairchild semi
fds4559.pdf pdf_icon

April 2002 FDS4559 60V Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using Q1 N-Channel Fairchild s advanced PowerTrench process that has 4.5 A, 60 V RDS(on) = 55 m @ VGS = 10V been especially tailored to minimize the on-state resistance and yet maintain low gate charge for RDS(on) = 75 m... See More ⇒

7.3. Size:288K onsemi
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Detailed specifications: FDS4470, FDS4488, STD12L01, FDS4501H, STB458D, STB440S, FDS4559, STB438S, 2N60, STB438A, FDS4672A, FDS4675F085, FDS4685, FDS4897AC, STB434S, FDS4897C, STB432S