FDS4559F085 - аналоги, параметры транзистора - Справочник транзисторов

FDS4559F085 даташит

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October 2008 tm FDS4559_F085 60V Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using Q1 N-Channel Fairchild s advanced PowerTrench process that has 4.5 A, 60 V RDS(on) = 55 m @ VGS = 10V been especially tailored to minimize the on-state resistance and yet maintain low gate charge for RD

7.2. Size:147K fairchild semi
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April 2002 FDS4559 60V Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using Q1 N-Channel Fairchild s advanced PowerTrench process that has 4.5 A, 60 V RDS(on) = 55 m @ VGS = 10V been especially tailored to minimize the on-state resistance and yet maintain low gate charge for RDS(on) = 75 m

7.3. Size:288K onsemi
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Другие MOSFET... FDS4470 , FDS4488 , STD12L01 , FDS4501H , STB458D , STB440S , FDS4559 , STB438S , 2N60 , STB438A , FDS4672A , FDS4675F085 , FDS4685 , FDS4897AC , STB434S , FDS4897C , STB432S .