SWB058R65E7T Todos los transistores

 

SWB058R65E7T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SWB058R65E7T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 176 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 364 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO263
 

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SWB058R65E7T datasheet

 ..1. Size:813K  samwin
 swp058r65e7t swb058r65e7t.pdf pdf_icon

SWB058R65E7T

SW058R65E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 65V High ruggedness Low RDS(ON) (Typ 6.1m )@VGS=10V ID 100A Low Gate Charge (Typ 104nC) RDS(ON) 6.1m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.

 7.1. Size:833K  samwin
 swp058r06e7t swb058r06e7t.pdf pdf_icon

SWB058R65E7T

SW058R06E7T N-channel Enhanced mode TO-220/TO-263 MOSFET TO-220 TO-263 Features BVDSS 60V ID 120A High ruggedness Low RDS(ON) (Typ 5.8m )@VGS=10V RDS(ON) 5.8m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 2 1 1 2 2 100% Avalanche Tested 3 3 Application Telecom, Computer, Inverter 1 1. Gate 2. Drain 3. Source 3 General Description

 9.1. Size:841K  samwin
 swp050r95e8s swb050r95e8s.pdf pdf_icon

SWB058R65E7T

SW050R95E8S N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 100V High ruggedness ID 130A Low RDS(ON) (Typ 5.9m )@VGS=10V Low Gate Charge (Typ 50nC) RDS(ON) 5.9m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Motor Drives 1 1. Gate 2.Dra

 9.2. Size:828K  samwin
 swp056r68e7t swb056r68e7t.pdf pdf_icon

SWB058R65E7T

SW056R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness ID 120A Low RDS(ON) (Typ 5.8m )@VGS=10V Low Gate Charge (Typ 107nC) RDS(ON) 5.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.

MOSTRAR MÁS

Otros transistores... SWB046R08E8T , SWB046R08E9T , SWB046R68E8T , SWB050R95E8S , SWB051R08ES , SWB055R68E7T , SWB056R68E7T , SWB058R06E7T , IRFZ46N , SWB060R65E7T , SWB060R68E7T , SWB062R08E8T , SWB062R68E7T , SWB065R68E7T , SWB068R08ET , SWB068R68E7T , SWB072R06ET .

History: STC6301D | STD10PF06 | AGM025N10C | AGM206A | MMP60R750PTH | IRFB3006G | KF5N53D

 

 
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