SWB058R65E7T - аналоги, параметры транзистора

SWB058R65E7T даташит

..1. Size:813K samwin
swp058r65e7t swb058r65e7t.pdf pdf_icon

SW058R65E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 65V High ruggedness Low RDS(ON) (Typ 6.1m )@VGS=10V ID 100A Low Gate Charge (Typ 104nC) RDS(ON) 6.1m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.

7.1. Size:833K samwin
swp058r06e7t swb058r06e7t.pdf pdf_icon

SW058R06E7T N-channel Enhanced mode TO-220/TO-263 MOSFET TO-220 TO-263 Features BVDSS 60V ID 120A High ruggedness Low RDS(ON) (Typ 5.8m )@VGS=10V RDS(ON) 5.8m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 2 1 1 2 2 100% Avalanche Tested 3 3 Application Telecom, Computer, Inverter 1 1. Gate 2. Drain 3. Source 3 General Description

9.1. Size:841K samwin
swp050r95e8s swb050r95e8s.pdf pdf_icon

SW050R95E8S N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 100V High ruggedness ID 130A Low RDS(ON) (Typ 5.9m )@VGS=10V Low Gate Charge (Typ 50nC) RDS(ON) 5.9m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Motor Drives 1 1. Gate 2.Dra

9.2. Size:828K samwin
swp056r68e7t swb056r68e7t.pdf pdf_icon

SW056R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness ID 120A Low RDS(ON) (Typ 5.8m )@VGS=10V Low Gate Charge (Typ 107nC) RDS(ON) 5.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.