SWB058R65E7T PDF and Equivalents Search

 

SWB058R65E7T PDF Specs and Replacement


   Type Designator: SWB058R65E7T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 364 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO263
 

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SWB058R65E7T PDF Specs

 ..1. Size:813K  samwin
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SWB058R65E7T

SW058R65E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 65V High ruggedness Low RDS(ON) (Typ 6.1m )@VGS=10V ID 100A Low Gate Charge (Typ 104nC) RDS(ON) 6.1m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.... See More ⇒

 7.1. Size:833K  samwin
swp058r06e7t swb058r06e7t.pdf pdf_icon

SWB058R65E7T

SW058R06E7T N-channel Enhanced mode TO-220/TO-263 MOSFET TO-220 TO-263 Features BVDSS 60V ID 120A High ruggedness Low RDS(ON) (Typ 5.8m )@VGS=10V RDS(ON) 5.8m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 2 1 1 2 2 100% Avalanche Tested 3 3 Application Telecom, Computer, Inverter 1 1. Gate 2. Drain 3. Source 3 General Description ... See More ⇒

 9.1. Size:841K  samwin
swp050r95e8s swb050r95e8s.pdf pdf_icon

SWB058R65E7T

SW050R95E8S N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 100V High ruggedness ID 130A Low RDS(ON) (Typ 5.9m )@VGS=10V Low Gate Charge (Typ 50nC) RDS(ON) 5.9m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Motor Drives 1 1. Gate 2.Dra... See More ⇒

 9.2. Size:828K  samwin
swp056r68e7t swb056r68e7t.pdf pdf_icon

SWB058R65E7T

SW056R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness ID 120A Low RDS(ON) (Typ 5.8m )@VGS=10V Low Gate Charge (Typ 107nC) RDS(ON) 5.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.... See More ⇒

Detailed specifications: SWB046R08E8T , SWB046R08E9T , SWB046R68E8T , SWB050R95E8S , SWB051R08ES , SWB055R68E7T , SWB056R68E7T , SWB058R06E7T , IRFZ46N , SWB060R65E7T , SWB060R68E7T , SWB062R08E8T , SWB062R68E7T , SWB065R68E7T , SWB068R08ET , SWB068R68E7T , SWB072R06ET .

Keywords - SWB058R65E7T MOSFET specs

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