All MOSFET. SWB058R65E7T Datasheet

 

SWB058R65E7T Datasheet and Replacement


   Type Designator: SWB058R65E7T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 364 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO263
 

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SWB058R65E7T Datasheet (PDF)

 ..1. Size:813K  samwin
 swp058r65e7t swb058r65e7t.pdf pdf_icon

SWB058R65E7T

SW058R65E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 65V High ruggedness Low RDS(ON) (Typ 6.1m)@VGS=10V ID : 100A Low Gate Charge (Typ 104nC)RDS(ON) : 6.1m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.

 7.1. Size:833K  samwin
 swp058r06e7t swb058r06e7t.pdf pdf_icon

SWB058R65E7T

SW058R06E7TN-channel Enhanced mode TO-220/TO-263 MOSFETTO-220 TO-263FeaturesBVDSS : 60VID : 120A High ruggedness Low RDS(ON) (Typ 5.8m)@VGS=10VRDS(ON) : 5.8m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 21 12 2 100% Avalanche Tested3 3 Application:Telecom, Computer, Inverter11. Gate 2. Drain 3. Source3General Description

 9.1. Size:841K  samwin
 swp050r95e8s swb050r95e8s.pdf pdf_icon

SWB058R65E7T

SW050R95E8SN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 100V High ruggednessID : 130A Low RDS(ON) (Typ 5.9m)@VGS=10V Low Gate Charge (Typ 50nC)RDS(ON) : 5.9m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Motor Drives11. Gate 2.Dra

 9.2. Size:828K  samwin
 swp056r68e7t swb056r68e7t.pdf pdf_icon

SWB058R65E7T

SW056R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 120A Low RDS(ON) (Typ 5.8m)@VGS=10V Low Gate Charge (Typ 107nC)RDS(ON) :5.8m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.

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Datasheet: SWB046R08E8T , SWB046R08E9T , SWB046R68E8T , SWB050R95E8S , SWB051R08ES , SWB055R68E7T , SWB056R68E7T , SWB058R06E7T , STP65NF06 , SWB060R65E7T , SWB060R68E7T , SWB062R08E8T , SWB062R68E7T , SWB065R68E7T , SWB068R08ET , SWB068R68E7T , SWB072R06ET .

Keywords - SWB058R65E7T MOSFET datasheet

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