FDS6673BZF085 Todos los transistores

 

FDS6673BZF085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDS6673BZF085
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 14.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0078 Ohm
   Paquete / Cubierta: SO-8
 

 Búsqueda de reemplazo de FDS6673BZF085 MOSFET

   - Selección ⓘ de transistores por parámetros

 

FDS6673BZF085 Datasheet (PDF)

 5.1. Size:226K  fairchild semi
 fds6673bz.pdf pdf_icon

FDS6673BZF085

March 2009FDS6673BZP-Channel PowerTrench MOSFET -30V, -14.5A, 7.8mGeneral Description FeaturesThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.8m, VGS = -10V, ID = -14.5A Semiconductors advanced Power Trench process that Max rDS(on) = 12m, VGS = -4.5V, ID = -12Ahas been especially tailored to minimize the on-state Extended VGS range (-25V) for b

 5.2. Size:600K  fairchild semi
 fds6673bz f085.pdf pdf_icon

FDS6673BZF085

July 2009FDS6673BZ_F085 P-Channel PowerTrench MOSFET -30V, -14.5A, 7.8mGeneral Description FeaturesThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.8m, VGS = -10V, ID = -14.5A Semiconductors advanced Power Trench process that Max rDS(on) = 12m, VGS = -4.5V, ID = -12Ahas been especially tailored to minimize the on-state Extended VGS range (-25V)

 5.3. Size:285K  onsemi
 fds6673bz.pdf pdf_icon

FDS6673BZF085

FDS6673BZP-Channel PowerTrench MOSFET -30V, -14.5A, 7.8mFeaturesGeneral Description Max rDS(on) = 7.8m, VGS = -10V, ID = -14.5AThis P-Channel MOSFET is produced using ON Semiconductors advanced Power Trench process that Max rDS(on) = 12m, VGS = -4.5V, ID = -12Ahas been especially tailored to minimize the on-state Extended VGS range (-25V) for battery applicatio

 5.4. Size:812K  cn vbsemi
 fds6673bz.pdf pdf_icon

FDS6673BZF085

FDS6673BZwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G

MOSTRAR MÁS

Otros transistores... FDS6294 , STB416D , FDS6298 , STB31L01 , FDS6574A , FDS6670AS , STA6968 , FDS6673BZ , AO4468 , FDS6675BZ , FDS6676AS , STA6620 , FDS6679AZ , FDS6680AS , STA6611 , FDS6681Z , FDS6682 .

History: IXFX180N07 | FQPF11P06

 

 
Back to Top

 


 
.