FDS6673BZF085 PDF and Equivalents Search

 

FDS6673BZF085 Specs and Replacement

Type Designator: FDS6673BZF085

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 14.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm

Package: SO-8

FDS6673BZF085 substitution

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FDS6673BZF085 datasheet

 5.1. Size:226K  fairchild semi
 fds6673bz.pdf pdf_icon

FDS6673BZF085

March 2009 FDS6673BZ P-Channel PowerTrench MOSFET -30V, -14.5A, 7.8m General Description Features This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.8m , VGS = -10V, ID = -14.5A Semiconductor s advanced Power Trench process that Max rDS(on) = 12m , VGS = -4.5V, ID = -12A has been especially tailored to minimize the on-state Extended VGS range (-25V) for b... See More ⇒

 5.2. Size:600K  fairchild semi
 fds6673bz f085.pdf pdf_icon

FDS6673BZF085

July 2009 FDS6673BZ_F085 P-Channel PowerTrench MOSFET -30V, -14.5A, 7.8m General Description Features This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.8m , VGS = -10V, ID = -14.5A Semiconductor s advanced Power Trench process that Max rDS(on) = 12m , VGS = -4.5V, ID = -12A has been especially tailored to minimize the on-state Extended VGS range (-25V) ... See More ⇒

 5.3. Size:285K  onsemi
 fds6673bz.pdf pdf_icon

FDS6673BZF085

FDS6673BZ P-Channel PowerTrench MOSFET -30V, -14.5A, 7.8m Features General Description Max rDS(on) = 7.8m , VGS = -10V, ID = -14.5A This P-Channel MOSFET is produced using ON Semiconductor s advanced Power Trench process that Max rDS(on) = 12m , VGS = -4.5V, ID = -12A has been especially tailored to minimize the on-state Extended VGS range (-25V) for battery applicatio... See More ⇒

 5.4. Size:812K  cn vbsemi
 fds6673bz.pdf pdf_icon

FDS6673BZF085

FDS6673BZ www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G ... See More ⇒

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Detailed specifications: FDS6294, STB416D, FDS6298, STB31L01, FDS6574A, FDS6670AS, STA6968, FDS6673BZ, 60N06, FDS6675BZ, FDS6676AS, STA6620, FDS6679AZ, FDS6680AS, STA6611, FDS6681Z, FDS6682

Keywords - FDS6673BZF085 MOSFET specs

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