SWF8N80K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SWF8N80K
Código: SW8N80K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 20 W
Voltaje máximo drenador - fuente |Vds|: 800 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 30 nC
Tiempo de subida (tr): 41 nS
Conductancia de drenaje-sustrato (Cd): 44 pF
Resistencia entre drenaje y fuente RDS(on): 0.8 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET SWF8N80K
SWF8N80K Datasheet (PDF)
swf8n80k swi8n80k swn8n80k swd8n80k swu8n80k.pdf
SW8N80K N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET Features BVDSS : 800V TO-220F TO-251 TO-251N TO-252 TO-262 ID : 8A High ruggedness Low RDS(ON) (Typ 0.67)@VGS=10V RDS(ON) : 0.67 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 1 2 1 2 1 2 1 2 3 3 3 3 Application:Adapter,LE
swp8n65d swi8n65d swd8n65d swf8n65d swnx8n65d.pdf
SW8N65D N-channel Enhanced mode TO-220/TO-251/TO-252/TO-220F/TO-251NX MOSFET BVDSS : 650V Features TO-220 TO-251 TO-252 TO-220F TO-251NX ID : 8A High ruggedness RDS(ON) : 1.1 Low RDS(ON) (Typ 1.1)@VGS=10V Low Gate Charge (Typ 32nC) 2 Improved dv/dt Capability 1 1 1 1 100% Avalanche Tested 1 2 2 2 2 2 3 3 3 3 Application:Charg
swu8n60d swf8n60d.pdf
SW8N60D N-channel Enhanced mode TO-262/TO-220F MOSFET Features TO-262 BVDSS : 600V TO-220F ID : 8A High ruggedness Low RDS(ON) (Typ 0.92)@VGS=10V RDS(ON) : 0.92 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 Application:LED,Charger,PC Power 2 3 3 1. Gate 2. Drain 3. Source 1 General Descr
sw8n70d swf8n70d swj8n70d.pdf
SW8N70D N-channel Enhanced mode TO-220F/TO-262N MOSFET Features TO-220F TO-262N BVDSS : 700V High ruggedness ID : 8A Low RDS(ON) (Typ 1.0m)@VGS=10 RDS(ON) : 1.0 Low Gate Charge (Typ 37nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:Electronic Ballast , Motor 3 3 Control , Synchronous Rectification, Inverter
sw8n65db swi8n65db swd8n65db swf8n65db swj8n65db.pdf
SW8N65DB N-channel Enhanced mode TO-251/TO-252 /TO-220F/TO-262N MOSFET Features BVDSS : 650V TO-251 TO-252 TO-220F TO-262N ID : 8A High ruggedness Low RDS(ON) (Typ 1.0)@VGS=10V RDS(ON) : 1.0 Low Gate Charge (Typ 34nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 1 1 1 2 2 2 2 Application:LED, Charge, PC Power 3 3 3 3 1
swf8n70k swd8n70k.pdf
SW8N70K N-channel Enhanced mode TO-220F/TO-252 MOSFET Features TO-252 TO-220F BVDSS : 700V ID : 8A High ruggedness Low RDS(ON) (Typ 0.55)@VGS=10V RDS(ON) : 0.55 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 100% Avalanche Tested 1 1 2 2 2 Application:LED, PC Power, Charger 3 3 1. Gate 2. Drain 3. Source 1 General
swf8n70d swj8n70d.pdf
SW8N70D N-channel Enhanced mode TO-220F/TO-262N MOSFET Features TO-220F TO-262N BVDSS : 700V High ruggedness ID : 8A Low RDS(ON) (Typ 1.0m)@VGS=10 RDS(ON) : 1.0 Low Gate Charge (Typ 37nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:Electronic Ballast , Motor 3 3 Control , Synchronous Rectification, Inverter
swi8n65db swd8n65db swf8n65db swj8n65db.pdf
SW8N65DBN-channel Enhanced mode TO-251/TO-252 /TO-220F/TO-262N MOSFETFeatures BVDSS : 650VTO-251 TO-252TO-220F TO-262NID : 8A High ruggedness Low RDS(ON) (Typ 1.0)@VGS=10V RDS(ON) : 1.0 Low Gate Charge (Typ 34nC)2 Improved dv/dt Capability 1 100% Avalanche Tested 11 12 22 2 Application:LED, Charger, PC Power3 33 311. Gate 2. Drain
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
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