SWF8N80K Specs and Replacement

Type Designator: SWF8N80K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 44 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO220F

SWF8N80K substitution

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SWF8N80K datasheet

 ..1. Size:986K  samwin
swf8n80k swi8n80k swn8n80k swd8n80k swu8n80k.pdf pdf_icon

SWF8N80K

SW8N80K N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET Features BVDSS 800V TO-220F TO-251 TO-251N TO-252 TO-262 ID 8A High ruggedness Low RDS(ON) (Typ 0.67 )@VGS=10V RDS(ON) 0.67 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 1 2 1 2 1 2 1 2 3 3 3 3 Application Adapter,LE... See More ⇒

 9.1. Size:1171K  samwin
swp8n65d swi8n65d swd8n65d swf8n65d swnx8n65d.pdf pdf_icon

SWF8N80K

SW8N65D N-channel Enhanced mode TO-220/TO-251/TO-252/TO-220F/TO-251NX MOSFET BVDSS 650V Features TO-220 TO-251 TO-252 TO-220F TO-251NX ID 8A High ruggedness RDS(ON) 1.1 Low RDS(ON) (Typ 1.1 )@VGS=10V Low Gate Charge (Typ 32nC) 2 Improved dv/dt Capability 1 1 1 1 100% Avalanche Tested 1 2 2 2 2 2 3 3 3 3 Application Charg... See More ⇒

 9.2. Size:804K  samwin
swu8n60d swf8n60d.pdf pdf_icon

SWF8N80K

SW8N60D N-channel Enhanced mode TO-262/TO-220F MOSFET Features TO-262 BVDSS 600V TO-220F ID 8A High ruggedness Low RDS(ON) (Typ 0.92 )@VGS=10V RDS(ON) 0.92 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 Application LED,Charger,PC Power 2 3 3 1. Gate 2. Drain 3. Source 1 General Descr... See More ⇒

 9.3. Size:710K  samwin
sw8n70d swf8n70d swj8n70d.pdf pdf_icon

SWF8N80K

SW8N70D N-channel Enhanced mode TO-220F/TO-262N MOSFET Features TO-220F TO-262N BVDSS 700V High ruggedness ID 8A Low RDS(ON) (Typ 1.0m )@VGS=10 RDS(ON) 1.0 Low Gate Charge (Typ 37nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Electronic Ballast , Motor 3 3 Control , Synchronous Rectification, Inverter... See More ⇒

Detailed specifications: SWF7N65K, SWF7N65K2, SWF7N65M, SWF7N70K, SWF830D1, SWF8N60D, SWF8N65D, SWF8N70K, RFP50N06, SWF9N50D, SWH040R03VLT, SWH045R02VT, SWH065R03VLT, SWH110R03VT, SWH160R02VT, SWHA018R03VLT, SWHA020R03VLT

Keywords - SWF8N80K MOSFET specs

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