SWP036R10E8S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SWP036R10E8S
Código: SW036R10E8S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 312.5 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 175 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 85 nC
Tiempo de subida (tr): 35 nS
Conductancia de drenaje-sustrato (Cd): 939 pF
Resistencia entre drenaje y fuente RDS(on): 0.0046 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET SWP036R10E8S
SWP036R10E8S Datasheet (PDF)
swp036r10e8s swb036r10e8s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SW036R10E8SN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 100V High ruggednessID : 175A Low RDS(ON) (Typ 3.8m)@VGS=10V Low Gate Charge (Typ 85nC)RDS(ON) :3.8m Improved dv/dt Capability 100% Avalanche Tested211 Application:Synchronous Rectification,2233Li Battery Protect Board, Motor Drivers11. Gate 2.
swp035r10e6s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SW035R10E6SN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 100V High ruggedness Low RDS(ON) (Typ 4.1m)@VGS=10VID : 120A Low Gate Charge (Typ 96nC)RDS(ON) : 4.1m Improved dv/dt Capability 100% Avalanche Tested1 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter21. Gate 2.Drain 3.Source1General Des
swp031r06et swb031r06et.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SW031R06ET N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 120A Low RDS(ON) (Typ 3.0m)@VGS=10V RDS(ON) : 3.0m Low Gate Charge (Typ 148nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:Electronic Ballast , Motor 3 3 Control , Synchronous Rectificat
swb038r10es swp038r10es.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SW038R10ES N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 100V High ruggedness ID : 120A Low RDS(ON) (Typ 3.6m)@VGS=10V RDS(ON) : 3.6m Low Gate Charge (Typ 132nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 2 Application:Synchronous Rectification, 2 3 3 Inverter , Li Battery Protect Bo
swp030r04vt swb030r04vt.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SW030R04VTN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 BVDSS : 40VTO-263 High ruggednessID : 130A Low RDS(ON) (Typ 3.7m)@VGS=4.5VRDS(ON) : 3.7m@VGS=4.5V(Typ 2.8m)@VGS=10V Low Gate Charge (Typ 120nC)2.8m@VGS=10V Improved dv/dt Capability 1 12 2 100% Avalanche Tested23 3 Application:Power Supply,LED Boost1. Gate 2.
sw038r10es swb038r10es swp038r10es swt038r10es.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SW038R10ES N-channel Enhanced mode TO-263/TO-220/TO-247 MOSFET Features TO-263 TO-220 TO-247 BVDSS : 100V High ruggedness ID : 120A Low RDS(ON) (Typ 3.6m)@VGS=10V RDS(ON) : 3.6m Low Gate Charge (Typ 132nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 2 Application:Synchronous Rectification, 2 2 3 3 3 Inverter ,
swp038r04vt.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SW038R04VT N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS : 40V High ruggedness Low RDS(ON) (Typ 4.3m)@VGS=4.5V ID : 95A (Typ 3.8m)@VGS=10V RDS(ON) : 4.3m@VGS=4.5V Low Gate Charge (Typ 105nC) Improved dv/dt Capability 3.8m@VGS=10V 100% Avalanche Tested 1 2 Application:DC-DC Converter, Motor Control, 3 2 Sy
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .