SWP036R10E8S Datasheet and Replacement. Cross Reference Search

SWP036R10E8S Datasheet (PDF)

..1. Size:752K samwin
swp036r10e8s swb036r10e8s.pdf pdf_icon

SW036R10E8SN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 100V High ruggednessID : 175A Low RDS(ON) (Typ 3.8m)@VGS=10V Low Gate Charge (Typ 85nC)RDS(ON) :3.8m Improved dv/dt Capability 100% Avalanche Tested211 Application:Synchronous Rectification,2233Li Battery Protect Board, Motor Drivers11. Gate 2.

9.1. Size:832K samwin
swp035r10e6s.pdf pdf_icon

SW035R10E6SN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 100V High ruggedness Low RDS(ON) (Typ 4.1m)@VGS=10VID : 120A Low Gate Charge (Typ 96nC)RDS(ON) : 4.1m Improved dv/dt Capability 100% Avalanche Tested1 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter21. Gate 2.Drain 3.Source1General Des

9.2. Size:725K samwin
swp031r06et swb031r06et.pdf pdf_icon

SW031R06ET N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 120A Low RDS(ON) (Typ 3.0m)@VGS=10V RDS(ON) : 3.0m Low Gate Charge (Typ 148nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:Electronic Ballast , Motor 3 3 Control , Synchronous Rectificat

9.3. Size:728K samwin
swb038r10es swp038r10es.pdf pdf_icon

SW038R10ES N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 100V High ruggedness ID : 120A Low RDS(ON) (Typ 3.6m)@VGS=10V RDS(ON) : 3.6m Low Gate Charge (Typ 132nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 2 Application:Synchronous Rectification, 2 3 3 Inverter , Li Battery Protect Bo