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S30N08M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: S30N08M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 67 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 78 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 29 nS
   Cossⓘ - Capacitancia de salida: 260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: TO252
 

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S30N08M Datasheet (PDF)

 ..1. Size:625K  cn si-tech
s30n08m.pdf pdf_icon

S30N08M

S30N08M SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=30V,ID=78A DC Motor Control Rds(on)(typ)=8m@Vgs=4.5V DC-DC Converters Rds(on)(typ)=4.8m@Vgs=10V BMS 100% Avalanche Tested SMPS 100% Rg TestedAutomotive Environment Lead-Free (RoHS Compliant) Internal Circuit and Pin

 9.1. Size:188K  fairchild semi
rfp30n06le rf1s30n06lesm.pdf pdf_icon

S30N08M

RFP30N06LE, RF1S30N06LESMData Sheet January 200430A, 60V, ESD Rated, 0.047 Ohm, Logic FeaturesLevel N-Channel Power MOSFETs 30A, 60VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.047the MegaFET process. This process, which uses feature 2kV ESD Protectedsizes approaching those of LSI integrated circuits gives optimum utilization of silicon, res

 9.2. Size:64K  harris semi
rf1s30n06le.pdf pdf_icon

S30N08M

RFP30N06LE, RF1S30N06LE,S E M I C O N D U C T O RRF1S30N06LESM30A, 60V, ESD Rated, Avalanche Rated, Logic LevelN-Channel Enhancement-Mode Power MOSFETsJuly 1995Features PackagesJEDEC TO-220AB 30A, 60VSOURCEDRAINGATE rDS(ON) = 0.047 2kV ESD Protected Temperature Compensating PSPICE ModelDRAIN Peak Current vs Pulse Width Curve (FLANGE) UIS Ra

 9.3. Size:877K  blue-rocket-elect
brcs30n02ip.pdf pdf_icon

S30N08M

BRCS30N02IP Rev.A Sep.-2018 DATA SHEET / Descriptions N TO-251 N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC

Otros transistores... S15H11R , S15H11RN , S15H11RP , S15H11S , S15H12R , S15H12RN , S15H12RP , S15H12S , P60NF06 , S40N08M , S40N09R , S40N09RN , S40N09RP , S40N09S , S40N12M , S40N14R , S40N14RN .

History: AON4407 | APT10030L2VFR | SI1070X | G30N20T | IXFH40N85X | NP82N055KLE | AP85T10GP-HF

 

 
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