S30N08M MOSFET Datasheet: N-Ch, 30V, 78A. Full specification with pinout and replacement list

S30N08M Specs and Replacement

Type Designator: S30N08M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 67 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 78 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO252

S30N08M substitution

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S30N08M datasheet

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S30N08M SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=30V,ID=78A DC Motor Control Rds(on)(typ)=8m @Vgs=4.5V DC-DC Converters Rds(on)(typ)=4.8m @Vgs=10V BMS 100% Avalanche Tested SMPS 100% Rg Tested Automotive Environment Lead-Free (RoHS Compliant) Internal Circuit and Pin... See More ⇒

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RFP30N06LE, RF1S30N06LESM Data Sheet January 2004 30A, 60V, ESD Rated, 0.047 Ohm, Logic Features Level N-Channel Power MOSFETs 30A, 60V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.047 the MegaFET process. This process, which uses feature 2kV ESD Protected sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, res... See More ⇒

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RFP30N06LE, RF1S30N06LE, S E M I C O N D U C T O R RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1995 Features Packages JEDEC TO-220AB 30A, 60V SOURCE DRAIN GATE rDS(ON) = 0.047 2kV ESD Protected Temperature Compensating PSPICE Model DRAIN Peak Current vs Pulse Width Curve (FLANGE) UIS Ra... See More ⇒

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