S60N10M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: S60N10M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 116 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 63 nS
Cossⓘ - Capacitancia de salida: 564 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0058 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de S60N10M MOSFET
- Selecciónⓘ de transistores por parámetros
S60N10M datasheet
s60n10m.pdf
S60N10M SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications V =60V,I =100A DS D DC Motor Control Rds(on)(typ)=4.8m @Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G S S Package
jcs60n10i.pdf
N N-CHANNEL MOSFET JCS60N10I MAIN CHARACTERISTICS Package ID 60A VDSS 100V Rdson-max - 16m (@Vgs=10V Qg-typ 51nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automotive app
hms60n10d.pdf
HMS60N10D N-Channel Super Trench Power MOSFET Primary Version Description The HMS60N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching an
s60n12r s60n12s s60n12rn s60n12rp.pdf
S60N12R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=60V,ID=120A DC Motor Control Rds(on)(typ)=4.5m @Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G G G G D D D
Otros transistores... S40N14R , S40N14RN , S40N14RP , S45N17R , S45N17RN , S45N17RP , S45N17S , S60N06M , STF13NM60N , S60N15R , S60N15RN , S60N15RP , S60N15S , S60N18R , S60N18RN , S60N18RP , S60N18S .
History: UPA1716G | WM03DH60A | GKI06259 | DMC3021LK4 | 2SK3121
History: UPA1716G | WM03DH60A | GKI06259 | DMC3021LK4 | 2SK3121
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
irf830 | irfp450 | mj21193 | s9014 transistor | bc547 transistor datasheet | c945 datasheet | irfp260 | ksc2383
