All MOSFET. S60N10M Datasheet

 

S60N10M MOSFET. Datasheet pdf. Equivalent


   Type Designator: S60N10M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 116 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 82 nC
   trⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 564 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: TO252

 S60N10M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

S60N10M Datasheet (PDF)

 ..1. Size:975K  cn si-tech
 s60n10m.pdf

S60N10M S60N10M

S60N10MSI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures ApplicationsV =60V,I =100ADS DDC Motor ControlRds(on)(typ)=4.8m@Vgs=10VDC-DC Converters100% Avalanche TestedBMS100% Rg TestedSMPSLead-Free (RoHS Compliant)Automotive EnvironmentInternal Circuit and Pin DescriptionDDGGSSPackage

 8.1. Size:535K  jilin sino
 jcs60n10i.pdf

S60N10M S60N10M

N N-CHANNEL MOSFET JCS60N10I MAIN CHARACTERISTICS Package ID 60A VDSS 100V Rdson-max - 16m (@Vgs=10V Qg-typ 51nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automotive app

 8.2. Size:550K  cn hmsemi
 hms60n10d.pdf

S60N10M S60N10M

HMS60N10DN-Channel Super Trench Power MOSFET Primary Version Description The HMS60N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching an

 9.1. Size:2299K  1
 s60n12r s60n12s s60n12rn s60n12rp.pdf

S60N10M S60N10M

S60N12R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=60V,ID=120A DC Motor Control Rds(on)(typ)=4.5m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD

 9.2. Size:324K  cn si-tech
 s60n15r s60n15s s60n15rn s60n15rp.pdf

S60N10M S60N10M

S60N15R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=60V,ID=155A DC Motor Control Rds(on)(typ)=3.5m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G G G G D D

 9.3. Size:2285K  cn si-tech
 s60n18r s60n18s s60n18rn s60n18rp.pdf

S60N10M S60N10M

S60N18R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=60V,ID=180A DC Motor Control Rds(on)(typ)=2.8m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD

 9.4. Size:2299K  cn si-tech
 s60n12r s60n12s s60n12rn s60n12rp.pdf

S60N10M S60N10M

S60N12R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=60V,ID=120A DC Motor Control Rds(on)(typ)=4.5m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: ISL9N306AS3S

 

 
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