HGA059N12SL Todos los transistores

 

HGA059N12SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGA059N12SL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 58 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 67 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 441 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0059 Ohm
   Paquete / Cubierta: TO-220F
 

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HGA059N12SL Datasheet (PDF)

 ..1. Size:812K  cn hunteck
hga059n12sl.pdf pdf_icon

HGA059N12SL

HGA059N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching, Logic Level5RDS(on),typ m Enhanced Body diode dv/dt capability67 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainPin2 Power Tools

 4.1. Size:812K  cn hunteck
hga059n12s.pdf pdf_icon

HGA059N12SL

HGA059N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching4.7RDS(on),typ m Enhanced Body diode dv/dt capability66.7 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainTO-220FPin2 Power Tools

 7.1. Size:973K  cn hunteck
hga059n08a.pdf pdf_icon

HGA059N12SL

HGA059N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching5.3RDS(on),typ mW Enhanced Body diode dv/dt capability49 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit Pin2TO-220

 9.1. Size:762K  cn hunteck
hga058n08sl.pdf pdf_icon

HGA059N12SL

HGA058N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching,Logic Level4.3RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.9RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness63 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSDrain Hard Swit

Otros transistores... HGA046NE6A , HGA046NE6AL , HGA053N06S , HGA053N06SL , HGA055N10SL , HGA058N08SL , HGA059N08A , HGA059N12S , 8205A , HGA080N10A , HGA080N10AL , HGA080N10S , HGA082N10M , HGA090N06SL , HGA093N12SL , HGA098N10A , HGA098N10AL .

History: BSZ110N06NS3G | MCH6664 | SUM110P08-11 | AFN4172WS | VBZE30N10 | DMN3035LWN | APM9926CCG

 

 
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