HGA059N12SL Specs and Replacement

Type Designator: HGA059N12SL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 58 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 67 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 441 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm

Package: TO-220F

HGA059N12SL substitution

- MOSFET ⓘ Cross-Reference Search

 

HGA059N12SL datasheet

 ..1. Size:812K  cn hunteck
hga059n12sl.pdf pdf_icon

HGA059N12SL

HGA059N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching, Logic Level 5 RDS(on),typ m Enhanced Body diode dv/dt capability 67 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Drain Pin2 Power Tools... See More ⇒

 4.1. Size:812K  cn hunteck
hga059n12s.pdf pdf_icon

HGA059N12SL

HGA059N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching 4.7 RDS(on),typ m Enhanced Body diode dv/dt capability 66.7 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Drain TO-220F Pin2 Power Tools ... See More ⇒

 7.1. Size:973K  cn hunteck
hga059n08a.pdf pdf_icon

HGA059N12SL

HGA059N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 5.3 RDS(on),typ mW Enhanced Body diode dv/dt capability 49 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit Pin2 TO-220... See More ⇒

 9.1. Size:762K  cn hunteck
hga058n08sl.pdf pdf_icon

HGA059N12SL

HGA058N08SL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching,Logic Level 4.3 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 5.9 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 63 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Drain Hard Swit... See More ⇒

Detailed specifications: HGA046NE6A, HGA046NE6AL, HGA053N06S, HGA053N06SL, HGA055N10SL, HGA058N08SL, HGA059N08A, HGA059N12S, IRFP260, HGA080N10A, HGA080N10AL, HGA080N10S, HGA082N10M, HGA090N06SL, HGA093N12SL, HGA098N10A, HGA098N10AL

Keywords - HGA059N12SL MOSFET specs

 HGA059N12SL cross reference

 HGA059N12SL equivalent finder

 HGA059N12SL pdf lookup

 HGA059N12SL substitution

 HGA059N12SL replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility