HGA080N10S Todos los transistores

 

HGA080N10S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGA080N10S
   Código: GA080N10S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 33 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 42 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 28 nC
   Tiempo de subida (tr): 6 nS
   Conductancia de drenaje-sustrato (Cd): 573 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0088 Ohm
   Paquete / Cubierta: TO-220F

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HGA080N10S Datasheet (PDF)

 ..1. Size:988K  cn hunteck
hga080n10s.pdf

HGA080N10S
HGA080N10S

HGA080N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability7.3RDS(on),typ mW Enhanced Avalanche Ruggedness42 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplicationDrain Synchronous Rectification in SMPSPin2 Hard Switching and High Speed Circuit DC/DC in Telecoms

 5.1. Size:992K  cn hunteck
hga080n10a.pdf

HGA080N10S
HGA080N10S

P-1HGA080N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching7.6RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability43.5 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit

 5.2. Size:906K  cn hunteck
hga080n10al.pdf

HGA080N10S
HGA080N10S

HGA080N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level7.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability9.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness45 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

 9.1. Size:800K  cn hunteck
hga082n10m.pdf

HGA080N10S
HGA080N10S

HGA082N10M P-1100V N-Ch Power MOSFET100 VFeature VDS6.4RDS(on),typ m Optimized for high speed smooth switching8.2RDS(on),max m Enhanced Body diode dv/dt capability48 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed CircuitPin

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