All MOSFET. HGA080N10S Datasheet

 

HGA080N10S Datasheet and Replacement


   Type Designator: HGA080N10S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 573 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
   Package: TO-220F
 

 HGA080N10S substitution

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HGA080N10S Datasheet (PDF)

 ..1. Size:988K  cn hunteck
 hga080n10s.pdf pdf_icon

HGA080N10S

HGA080N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability7.3RDS(on),typ mW Enhanced Avalanche Ruggedness42 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplicationDrain Synchronous Rectification in SMPSPin2 Hard Switching and High Speed Circuit DC/DC in Telecoms

 5.1. Size:992K  cn hunteck
 hga080n10a.pdf pdf_icon

HGA080N10S

P-1HGA080N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching7.6RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability43.5 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit

 5.2. Size:906K  cn hunteck
 hga080n10al.pdf pdf_icon

HGA080N10S

HGA080N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level7.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability9.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness45 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

 9.1. Size:800K  cn hunteck
 hga082n10m.pdf pdf_icon

HGA080N10S

HGA082N10M P-1100V N-Ch Power MOSFET100 VFeature VDS6.4RDS(on),typ m Optimized for high speed smooth switching8.2RDS(on),max m Enhanced Body diode dv/dt capability48 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed CircuitPin

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Datasheet: HGA053N06SL , HGA055N10SL , HGA058N08SL , HGA059N08A , HGA059N12S , HGA059N12SL , HGA080N10A , HGA080N10AL , IRF9540N , HGA082N10M , HGA090N06SL , HGA093N12SL , HGA098N10A , HGA098N10AL , HGA098N10S , HGA100N12S , HGA100N12SL .

History: DMN3150LW | DMP6110SSD | EM6K7 | APTC60DAM18CTG | ELM56801EA | KI2300 | HUFA75829D3S

Keywords - HGA080N10S MOSFET datasheet

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