HGA080N10S Specs and Replacement

Type Designator: HGA080N10S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 573 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm

Package: TO-220F

HGA080N10S substitution

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HGA080N10S datasheet

 ..1. Size:988K  cn hunteck
 hga080n10s.pdf pdf_icon

HGA080N10S

HGA080N10S P-1 100V N-Ch Power MOSFET Feature High Speed Power Switching 100 V VDS Enhanced Body diode dv/dt capability 7.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 42 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Drain Synchronous Rectification in SMPS Pin2 Hard Switching and High Speed Circuit DC/DC in Telecoms ... See More ⇒

 5.1. Size:992K  cn hunteck
 hga080n10a.pdf pdf_icon

HGA080N10S

P-1 HGA080N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 7.6 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 43.5 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit... See More ⇒

 5.2. Size:906K  cn hunteck
 hga080n10al.pdf pdf_icon

HGA080N10S

HGA080N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 7.1 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 9.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 45 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain ... See More ⇒

 9.1. Size:800K  cn hunteck
 hga082n10m.pdf pdf_icon

HGA080N10S

HGA082N10M P-1 100V N-Ch Power MOSFET 100 V Feature VDS 6.4 RDS(on),typ m Optimized for high speed smooth switching 8.2 RDS(on),max m Enhanced Body diode dv/dt capability 48 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit Pin... See More ⇒

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Detailed specifications: HGA053N06SL, HGA055N10SL, HGA058N08SL, HGA059N08A, HGA059N12S, HGA059N12SL, HGA080N10A, HGA080N10AL, SKD502T, HGA082N10M, HGA090N06SL, HGA093N12SL, HGA098N10A, HGA098N10AL, HGA098N10S, HGA100N12S, HGA100N12SL

Keywords - HGA080N10S MOSFET specs

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