HGK027N10A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HGK027N10A
   Código: GK027N10A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 341 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 106 nC
   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 114 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0027 Ohm
   Paquete / Cubierta: TO-247

Búsqueda de reemplazo de MOSFET HGK027N10A

HGK027N10A Datasheet (PDF)

..1. Size:1042K cn hunteck
hgb027n10a hgk027n10a hgp027n10a.pdf

HGB027N10A , P-1HGK027N10AHGP027N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingRDS(on),typ TO-263 VGS=10V 2.2 mW Enhanced Body diode dv/dt capabilityRDS(on),typ TO-247 VGS=10V 2.4 mW Enhanced Avalanche RuggednessRDS(on),typ TO-220 VGS=10V 2.5 mW 100% UIS Tested, 100% Rg Tested248 AID (Sillicon Limited) Lead Free, Halogen Free

9.1. Size:861K cn hunteck
hgb021n08s hgk023n08s hgp024n08s.pdf

,HGB021N08S HGK023N08S P-1HGP024N08S80V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 1.75RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 1.92RDS(on),typ m Enhanced Avalanche RuggednessTO-220 2.00RDS(on),typ m 100% UIS Tested, 100% Rg Tested290 AID (Sillicon Limited) Lead Free205 AID (Package Limited)

9.2. Size:1129K cn hunteck
hgb020ne4s hgk020ne4s hgp020ne4s.pdf

, P-1HGB020NE4S HGK020NE4SHGP020NE4S45V N-Ch Power MOSFETFeature45 VVDS High Speed Power SwitchingTO-263 1.75RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 1.75RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 1.75RDS(on),typ mW 100% UIS Tested, 100% Rg Tested288 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Appli

9.3. Size:870K cn hunteck
hgb025n06s hgk025n06s hgp025n06s.pdf

,HGB025N06S HGK025N06S P-1HGP025N06S60V N-Ch Power MOSFETFeature60 VVDS High Speed Power SwitchingTO-263 1.6RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 1.8RDS(on),typ m Enhanced Avalanche RuggednessTO-220 1.9RDS(on),typ m 100% UIS Tested, 100% Rg Tested230 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Ap

9.4. Size:1055K cn hunteck
hgb020n10s hgk020n10s hgp020n10s.pdf

, P-1HGB020N10S HGK020N10SHGP020N10S100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingRDS(on),typ TO-263 1.6 mW Enhanced Body diode dv/dt capabilityRDS(on),typ TO-247 1.8 mW Enhanced Avalanche RuggednessRDS(on),typ TO-220 1.9 mW 100% UIS Tested, 100% Rg Tested327 AID (Sillicon Limited) Lead Free, Halogen Free180 AID (Package Limit

9.5. Size:935K cn hunteck
hgk026n15s.pdf

HGK026N15S P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching2.35RDS(on),typ mW Enhanced Body diode dv/dt capability366 AID (Sillicon Limited) Enhanced Avalanche Ruggedness180 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplicationDrain Synchronous Rectification in SMPSPin2 Hard Switch

9.6. Size:976K cn hunteck
hgb027n10s hgk029n10s hgp030n10s.pdf

, P-1HGB027N10S HGK029N10SHGP030N10S100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 2.25RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 2.42RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 2.50RDS(on),typ mW 100% UIS Tested, 100% Rg Tested260 AID (Sillicon Limited) Lead Free120 AID (Package Limited)App

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