All MOSFET. HGK027N10A Datasheet

 

HGK027N10A Datasheet and Replacement


   Type Designator: HGK027N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 341 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 114 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: TO-247
 

 HGK027N10A substitution

   - MOSFET ⓘ Cross-Reference Search

 

HGK027N10A Datasheet (PDF)

 ..1. Size:1042K  cn hunteck
 hgb027n10a hgk027n10a hgp027n10a.pdf pdf_icon

HGK027N10A

HGB027N10A , P-1HGK027N10AHGP027N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingRDS(on),typ TO-263 VGS=10V 2.2 mW Enhanced Body diode dv/dt capabilityRDS(on),typ TO-247 VGS=10V 2.4 mW Enhanced Avalanche RuggednessRDS(on),typ TO-220 VGS=10V 2.5 mW 100% UIS Tested, 100% Rg Tested248 AID (Sillicon Limited) Lead Free, Halogen Free

 9.1. Size:861K  cn hunteck
 hgb021n08s hgk023n08s hgp024n08s.pdf pdf_icon

HGK027N10A

,HGB021N08S HGK023N08S P-1HGP024N08S80V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 1.75RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 1.92RDS(on),typ m Enhanced Avalanche RuggednessTO-220 2.00RDS(on),typ m 100% UIS Tested, 100% Rg Tested290 AID (Sillicon Limited) Lead Free205 AID (Package Limited)

 9.2. Size:1129K  cn hunteck
 hgb020ne4s hgk020ne4s hgp020ne4s.pdf pdf_icon

HGK027N10A

, P-1HGB020NE4S HGK020NE4SHGP020NE4S45V N-Ch Power MOSFETFeature45 VVDS High Speed Power SwitchingTO-263 1.75RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 1.75RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 1.75RDS(on),typ mW 100% UIS Tested, 100% Rg Tested288 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Appli

 9.3. Size:870K  cn hunteck
 hgb025n06s hgk025n06s hgp025n06s.pdf pdf_icon

HGK027N10A

,HGB025N06S HGK025N06S P-1HGP025N06S60V N-Ch Power MOSFETFeature60 VVDS High Speed Power SwitchingTO-263 1.6RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 1.8RDS(on),typ m Enhanced Avalanche RuggednessTO-220 1.9RDS(on),typ m 100% UIS Tested, 100% Rg Tested230 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Ap

SHOW MORE

Datasheet: HGB023NE6A , HGP023NE6A , HGB025N06S , HGK025N06S , HGP025N06S , HGB025N10A , HGB025N12S , HGB027N10A , BS170 , HGP027N10A , HGB027N10S , HGK029N10S , HGP030N10S , HGB027N12S , HGP027N12S , HGB028N08A , HGP028N08A .

History: HGP090N06SL | RQJ0305EQDQA | AON6248 | KRLML6401 | P057AAT | AON6266 | HGD095NE4SL

Keywords - HGK027N10A MOSFET datasheet

 HGK027N10A cross reference
 HGK027N10A equivalent finder
 HGK027N10A lookup
 HGK027N10A substitution
 HGK027N10A replacement

 

 
Back to Top

 


 
.