HGB037N10S Todos los transistores

 

HGB037N10S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGB037N10S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 56 nS
   Cossⓘ - Capacitancia de salida: 580 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm
   Paquete / Cubierta: TO-263
 

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HGB037N10S Datasheet (PDF)

 ..1. Size:918K  cn hunteck
 hgb037n10s hgk037n10s hgp037n10s.pdf pdf_icon

HGB037N10S

HGB037N10S HGK037N10S P-1,HGP037N10S100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 2.8RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 3RDS(on),typ m Enhanced Avalanche RuggednessTO-220 3.1RDS(on),typ m 100% UIS Tested, 100% Rg Tested190 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Ap

 5.1. Size:1604K  cn hunteck
 hgb037n10t hgp037n10t hga037n10t.pdf pdf_icon

HGB037N10S

HGB037N10T HGP037N10T P-1,HGA037N10T100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Smooth Switching3.7RDS(on),max mW Enhanced Body diode dv/dt capability168 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools

 6.1. Size:1006K  cn hunteck
 hgb037n15m.pdf pdf_icon

HGB037N10S

P-1HGB037N15M150V N-Ch Power MOSFETFeature High Speed Power Smooth Switching150 VVDS Enhanced Body diode dv/dt capability3.1RDS(on),typ mW Enhanced Avalanche Ruggedness220 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrain Power ToolsPin4TO-263-7

 9.1. Size:968K  cn hunteck
 hgb035n08a hgp035n08a.pdf pdf_icon

HGB037N10S

HGB035N08A , HGP035N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 3RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 3.3RDS(on),typ mW Enhanced Avalanche Ruggedness161 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and Hig

MOSTRAR MÁS

Otros transistores... HGP029N06SL , HGB029NE4SL , HGP029NE4SL , HGB035N08A , HGP035N08A , HGB035N10A , HGK035N10A , HGP035N10A , 10N60 , HGK037N10S , HGP037N10S , HGB037N10T , HGP037N10T , HGA037N10T , HGB037N15M , HGB039N08A , HGP039N08A .

History: HGB037N10T | IPI60R099CP | MTDNK2N6 | TK60A08J1 | PSMN1R7-25YLC

 

 
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