HGB037N10S Specs and Replacement

Type Designator: HGB037N10S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 56 nS

Cossⓘ - Output Capacitance: 580 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm

Package: TO-263

HGB037N10S substitution

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HGB037N10S datasheet

 ..1. Size:918K  cn hunteck
hgb037n10s hgk037n10s hgp037n10s.pdf pdf_icon

HGB037N10S

HGB037N10S HGK037N10S P-1 , HGP037N10S 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 2.8 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 3 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 3.1 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 190 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Ap... See More ⇒

 5.1. Size:1604K  cn hunteck
hgb037n10t hgp037n10t hga037n10t.pdf pdf_icon

HGB037N10S

HGB037N10T HGP037N10T P-1 , HGA037N10T 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Smooth Switching 3.7 RDS(on),max mW Enhanced Body diode dv/dt capability 168 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools... See More ⇒

 6.1. Size:1006K  cn hunteck
hgb037n15m.pdf pdf_icon

HGB037N10S

P-1 HGB037N15M 150V N-Ch Power MOSFET Feature High Speed Power Smooth Switching 150 V VDS Enhanced Body diode dv/dt capability 3.1 RDS(on),typ mW Enhanced Avalanche Ruggedness 220 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Drain Power Tools Pin4 TO-263-7 ... See More ⇒

 9.1. Size:968K  cn hunteck
hgb035n08a hgp035n08a.pdf pdf_icon

HGB037N10S

HGB035N08A , HGP035N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 3 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 3.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 161 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and Hig... See More ⇒

Detailed specifications: HGP029N06SL, HGB029NE4SL, HGP029NE4SL, HGB035N08A, HGP035N08A, HGB035N10A, HGK035N10A, HGP035N10A, 10N60, HGK037N10S, HGP037N10S, HGB037N10T, HGP037N10T, HGA037N10T, HGB037N15M, HGB039N08A, HGP039N08A

Keywords - HGB037N10S MOSFET specs

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