HGP039N08S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGP039N08S
Código: GP039N08S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 250 W
Voltaje máximo drenador - fuente |Vds|: 80 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 120 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 64 nC
Tiempo de subida (tr): 13 nS
Conductancia de drenaje-sustrato (Cd): 602 pF
Resistencia entre drenaje y fuente RDS(on): 0.0038 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET HGP039N08S
HGP039N08S Datasheet (PDF)
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