HGP039N08S MOSFET. Datasheet pdf. Equivalent
Type Designator: HGP039N08S
Marking Code: GP039N08S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Total Gate Charge (Qg): 64 nC
Rise Time (tr): 13 nS
Drain-Source Capacitance (Cd): 602 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0038 Ohm
Package: TO-220
HGP039N08S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGP039N08S Datasheet (PDF)
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