HGB042N10S Todos los transistores

 

HGB042N10S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGB042N10S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 214 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 161 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 1066 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm
   Paquete / Cubierta: TO-263
 

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HGB042N10S Datasheet (PDF)

 ..1. Size:802K  cn hunteck
 hgb042n10s hgp042n10s.pdf pdf_icon

HGB042N10S

,HGB042N10S HGP042N10S P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 3.4RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 3.7RDS(on),typ m Enhanced Avalanche Ruggedness161 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSTO-220TO-263 Hard Switching and

 5.1. Size:835K  cn hunteck
 hgb042n10a hgp042n10a.pdf pdf_icon

HGB042N10S

,HGB042N10A HGP042N10A P-1100V N-Ch Power MOSFET100 VVDSFeatureTO-263 3.4RDS(on),typ m Optimized for high speed smooth switchingTO-220 3.7RDS(on),typ m Enhanced Body diode dv/dt capability167 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication DC-DC Conversion Drain Hard Swit

 9.1. Size:1049K  cn hunteck
 hgb043n15s hgk043n15s hgp043n15s.pdf pdf_icon

HGB042N10S

, P-1HGB043N15S HGK043N15SHGP043N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 3.9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 4.2RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 4.3RDS(on),typ mW 100% UIS Tested, 100% Rg Tested206 AID (Sillicon Limited) Lead FreeApplication Synchronous

 9.2. Size:822K  cn hunteck
 hgb040n06sl hgp040n06sl.pdf pdf_icon

HGB042N10S

HGB040N06SL HGP040N06SL P-1,60V N-Ch Power MOSFET60 VVDSFeature2.9RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.1RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability3.2RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness4.4RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested140 AID (Sillicon Limited)

MOSTRAR MÁS

Otros transistores... HGP039N15M , HGB040N06S , HGP040N06S , HGB040N06SL , HGP040N06SL , HGB041N15S , HGB042N10A , HGP042N10A , TK10A60D , HGP042N10S , HGB043N15S , HGK043N15S , HGP043N15S , HGB045N15S , HGK045N15S , HGP045N15S , HGB046NE6A .

History: 2SK1007 | IPD60R1K5CE | CHM4435AZGP | FQAF7N90 | IXFN170N30P | NTMFS4C054N | CHM62A2PAGP

 

 
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