HGB042N10S Specs and Replacement

Type Designator: HGB042N10S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 214 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 161 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 1066 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm

Package: TO-263

HGB042N10S substitution

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HGB042N10S datasheet

 ..1. Size:802K  cn hunteck
 hgb042n10s hgp042n10s.pdf pdf_icon

HGB042N10S

, HGB042N10S HGP042N10S P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 3.4 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 3.7 RDS(on),typ m Enhanced Avalanche Ruggedness 161 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS TO-220 TO-263 Hard Switching and... See More ⇒

 5.1. Size:835K  cn hunteck
 hgb042n10a hgp042n10a.pdf pdf_icon

HGB042N10S

, HGB042N10A HGP042N10A P-1 100V N-Ch Power MOSFET 100 V VDS Feature TO-263 3.4 RDS(on),typ m Optimized for high speed smooth switching TO-220 3.7 RDS(on),typ m Enhanced Body diode dv/dt capability 167 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application DC-DC Conversion Drain Hard Swit... See More ⇒

 9.1. Size:1049K  cn hunteck
 hgb043n15s hgk043n15s hgp043n15s.pdf pdf_icon

HGB042N10S

, P-1 HGB043N15S HGK043N15S HGP043N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 3.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 4.2 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 4.3 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 206 A ID (Sillicon Limited) Lead Free Application Synchronous... See More ⇒

 9.2. Size:822K  cn hunteck
 hgb040n06sl hgp040n06sl.pdf pdf_icon

HGB042N10S

HGB040N06SL HGP040N06SL P-1 , 60V N-Ch Power MOSFET 60 V VDS Feature 2.9 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.1 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 3.2 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 4.4 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested 140 A ID (Sillicon Limited) ... See More ⇒

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Detailed specifications: HGP039N15M, HGB040N06S, HGP040N06S, HGB040N06SL, HGP040N06SL, HGB041N15S, HGB042N10A, HGP042N10A, 13N50, HGP042N10S, HGB043N15S, HGK043N15S, HGP043N15S, HGB045N15S, HGK045N15S, HGP045N15S, HGB046NE6A

Keywords - HGB042N10S MOSFET specs

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