Справочник MOSFET. HGB042N10S

 

HGB042N10S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HGB042N10S
   Маркировка: GB042N10S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 214 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 161 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 52 nC
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 1066 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0039 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для HGB042N10S

 

 

HGB042N10S Datasheet (PDF)

 ..1. Size:802K  cn hunteck
 hgb042n10s hgp042n10s.pdf

HGB042N10S HGB042N10S

,HGB042N10S HGP042N10S P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 3.4RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 3.7RDS(on),typ m Enhanced Avalanche Ruggedness161 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSTO-220TO-263 Hard Switching and

 5.1. Size:835K  cn hunteck
 hgb042n10a hgp042n10a.pdf

HGB042N10S HGB042N10S

,HGB042N10A HGP042N10A P-1100V N-Ch Power MOSFET100 VVDSFeatureTO-263 3.4RDS(on),typ m Optimized for high speed smooth switchingTO-220 3.7RDS(on),typ m Enhanced Body diode dv/dt capability167 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication DC-DC Conversion Drain Hard Swit

 9.1. Size:1049K  cn hunteck
 hgb043n15s hgk043n15s hgp043n15s.pdf

HGB042N10S HGB042N10S

, P-1HGB043N15S HGK043N15SHGP043N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 3.9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 4.2RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 4.3RDS(on),typ mW 100% UIS Tested, 100% Rg Tested206 AID (Sillicon Limited) Lead FreeApplication Synchronous

 9.2. Size:822K  cn hunteck
 hgb040n06sl hgp040n06sl.pdf

HGB042N10S HGB042N10S

HGB040N06SL HGP040N06SL P-1,60V N-Ch Power MOSFET60 VVDSFeature2.9RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.1RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability3.2RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness4.4RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested140 AID (Sillicon Limited)

 9.3. Size:919K  cn hunteck
 hgb046ne6a hgp046ne6a.pdf

HGB042N10S HGB042N10S

, P-1HGB046NE6A HGP046NE6A65V N-Ch Power MOSFETFeature65 VVDS High Speed Power SwitchingTO-263 3.9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 4.2RDS(on),typ mW Enhanced Avalanche Ruggedness108 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

 9.4. Size:815K  cn hunteck
 hgb049n10s hgp049n10s.pdf

HGB042N10S HGB042N10S

HGB049N10S HGP049N10S P-1,100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 3.9RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 4.2RDS(on),typ m Enhanced Avalanche Ruggedness152 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead FreeApplication Synchronous Rectification

 9.5. Size:906K  cn hunteck
 hgb047n12s hgp047n12s.pdf

HGB042N10S HGB042N10S

, P-1HGB047N12S HGP047N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth SwitchingTO-263 3.6RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 3.9RDS(on),typ mW Enhanced Avalanche Ruggedness167 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switchi

 9.6. Size:1002K  cn hunteck
 hgb041n15s.pdf

HGB042N10S HGB042N10S

P-1HGB041N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263-7 3.8RDS(on),typ mW Enhanced Body diode dv/dt capability213 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSTO-263-7 Hard Switching and High Speed Circuit

 9.7. Size:810K  cn hunteck
 hgb040n06s hgp040n06s.pdf

HGB042N10S HGB042N10S

HGB040N06S HGP040N06S P-1,60V N-Ch Power MOSFET60 VVDSFeatureTO-263 3.1RDS(on),typ m Optimized for high speed switchingTO-220 3.4RDS(on),typ m Enhanced Body diode dv/dt capability156 AID (Sillicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synch

 9.8. Size:1055K  cn hunteck
 hgb045n15s hgk045n15s hgp045n15s.pdf

HGB042N10S HGB042N10S

, P-1HGB045N15S HGK045N15SHGP045N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 4.1RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 4.1RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 4.1RDS(on),typ mW 100% UIS Tested, 100% Rg Tested194 AID (Sillicon Limited) Lead Free180 AID (Package Limited)

 9.9. Size:922K  cn hunteck
 hgb046ne6al hgp046ne6al.pdf

HGB042N10S HGB042N10S

, P-1HGB046NE6ALHGP046NE6AL65V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic level3.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness4.2RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested6.3RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free108 AID (Sillic

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