HGB042N10S - описание и поиск аналогов

, HGB042N10S HGP042N10S P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 3.4 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 3.7 RDS(on),typ m Enhanced Avalanche Ruggedness 161 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS TO-220 TO-263 Hard Switching and

, HGB042N10A HGP042N10A P-1 100V N-Ch Power MOSFET 100 V VDS Feature TO-263 3.4 RDS(on),typ m Optimized for high speed smooth switching TO-220 3.7 RDS(on),typ m Enhanced Body diode dv/dt capability 167 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application DC-DC Conversion Drain Hard Swit

, P-1 HGB043N15S HGK043N15S HGP043N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 3.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 4.2 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 4.3 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 206 A ID (Sillicon Limited) Lead Free Application Synchronous

HGB040N06SL HGP040N06SL P-1 , 60V N-Ch Power MOSFET 60 V VDS Feature 2.9 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.1 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 3.2 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 4.4 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested 140 A ID (Sillicon Limited)

, P-1 HGB046NE6A HGP046NE6A 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching TO-263 3.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 4.2 RDS(on),typ mW Enhanced Avalanche Ruggedness 108 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain

HGB049N10S HGP049N10S P-1 , 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 3.9 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 4.2 RDS(on),typ m Enhanced Avalanche Ruggedness 152 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free Application Synchronous Rectification

, P-1 HGB047N12S HGP047N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching TO-263 3.6 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 3.9 RDS(on),typ mW Enhanced Avalanche Ruggedness 167 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switchi

HGB040N06S HGP040N06S P-1 , 60V N-Ch Power MOSFET 60 V VDS Feature TO-263 3.1 RDS(on),typ m Optimized for high speed switching TO-220 3.4 RDS(on),typ m Enhanced Body diode dv/dt capability 156 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 120 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synch

, P-1 HGB045N15S HGK045N15S HGP045N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 4.1 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 4.1 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 4.1 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 194 A ID (Sillicon Limited) Lead Free 180 A ID (Package Limited)

, P-1 HGB046NE6AL HGP046NE6AL 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic level 3.9 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 6 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 4.2 RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested 6.3 RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free 108 A ID (Sillic