HGB050N10A Todos los transistores

 

HGB050N10A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGB050N10A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 179 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 125 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 571 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: TO-263
 

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HGB050N10A Datasheet (PDF)

 ..1. Size:975K  cn hunteck
 hgb050n10a hgp050n10a.pdf pdf_icon

HGB050N10A

, P-1HGB050N10A HGP050N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 4.5RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 4.8RDS(on),typ mW Enhanced Avalanche Ruggedness125 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSTO-220TO-263 Hard Switching and Hig

 6.1. Size:851K  cn hunteck
 hgb050n14s hgp050n14s.pdf pdf_icon

HGB050N10A

,HGB050N14S HGP050N14S P-1135V N-Ch Power MOSFETFeature135 VVDS High Speed Power Smooth Switching4.5RDS(on),TYP m Enhanced Body diode dv/dt capability175 AID (Sillicon Limited) Enhanced Avalanche Ruggedness180 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching a

 9.1. Size:919K  cn hunteck
 hgb059n08a hgp059n08a.pdf pdf_icon

HGB050N10A

, P-1HGB059N08AHGP059N08A80V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 4.9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 5.2RDS(on),typ mW Enhanced Avalanche Ruggedness97 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

 9.2. Size:849K  cn hunteck
 hgb059n12s hgp059n12s.pdf pdf_icon

HGB050N10A

,HGB059N12S HGP059N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth SwitchingTO-263 4.4RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 4.7RDS(on),typ m Enhanced Avalanche Ruggedness160 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead FreeApplication Synchronous Rectif

MOSTRAR MÁS

Otros transistores... HGB046NE6A , HGP046NE6A , HGB046NE6AL , HGP046NE6AL , HGB047N12S , HGP047N12S , HGB049N10S , HGP049N10S , 10N65 , HGP050N10A , HGB050N14S , HGP050N14S , HGB053N06S , HGP053N06S , HGB053N06SL , HGP053N06SL , HGB055N12S .

History: VS3645DE-G | PMCXB900UE | STU70N2LH5 | APM2309AC | HGI120N10AL | CHM5506JGP | RSS090P03FU6TB

 

 
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