HGB050N10A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGB050N10A 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 179 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 125 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 571 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Encapsulados: TO-263
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HGB050N10A datasheet
hgb050n10a hgp050n10a.pdf
, P-1 HGB050N10A HGP050N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 4.5 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 4.8 RDS(on),typ mW Enhanced Avalanche Ruggedness 125 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS TO-220 TO-263 Hard Switching and Hig
hgb050n14s hgp050n14s.pdf
, HGB050N14S HGP050N14S P-1 135V N-Ch Power MOSFET Feature 135 V VDS High Speed Power Smooth Switching 4.5 RDS(on),TYP m Enhanced Body diode dv/dt capability 175 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 180 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching a
hgb059n08a hgp059n08a.pdf
, P-1 HGB059N08A HGP059N08A 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 4.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 5.2 RDS(on),typ mW Enhanced Avalanche Ruggedness 97 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain
hgb059n12s hgp059n12s.pdf
, HGB059N12S HGP059N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching TO-263 4.4 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 4.7 RDS(on),typ m Enhanced Avalanche Ruggedness 160 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free Application Synchronous Rectif
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Parámetros del MOSFET. Cómo se afectan entre sí.
History: IXFY26N30X3 | DH060N08D | NVTFS6H888NL | SSW60R105SFD2 | APT8043SFLLG | SRH03P098LMTR-G | APJ10N65P
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