HGB050N10A Datasheet. Specs and Replacement

Type Designator: HGB050N10A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 179 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 125 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 571 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO-263

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HGB050N10A datasheet

 ..1. Size:975K  cn hunteck
 hgb050n10a hgp050n10a.pdf pdf_icon

HGB050N10A

, P-1 HGB050N10A HGP050N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 4.5 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 4.8 RDS(on),typ mW Enhanced Avalanche Ruggedness 125 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS TO-220 TO-263 Hard Switching and Hig... See More ⇒

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 hgb050n14s hgp050n14s.pdf pdf_icon

HGB050N10A

, HGB050N14S HGP050N14S P-1 135V N-Ch Power MOSFET Feature 135 V VDS High Speed Power Smooth Switching 4.5 RDS(on),TYP m Enhanced Body diode dv/dt capability 175 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 180 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching a... See More ⇒

 9.1. Size:919K  cn hunteck
 hgb059n08a hgp059n08a.pdf pdf_icon

HGB050N10A

, P-1 HGB059N08A HGP059N08A 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 4.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 5.2 RDS(on),typ mW Enhanced Avalanche Ruggedness 97 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain ... See More ⇒

 9.2. Size:849K  cn hunteck
 hgb059n12s hgp059n12s.pdf pdf_icon

HGB050N10A

, HGB059N12S HGP059N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching TO-263 4.4 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 4.7 RDS(on),typ m Enhanced Avalanche Ruggedness 160 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free Application Synchronous Rectif... See More ⇒

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Detailed specifications: HGB046NE6A, HGP046NE6A, HGB046NE6AL, HGP046NE6AL, HGB047N12S, HGP047N12S, HGB049N10S, HGP049N10S, IRFP250, HGP050N10A, HGB050N14S, HGP050N14S, HGB053N06S, HGP053N06S, HGB053N06SL, HGP053N06SL, HGB055N12S

Keywords - HGB050N10A MOSFET specs

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