HGB080N08SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HGB080N08SL
   Código: GB080N08SL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 85 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Qgⓘ - Carga de la puerta: 40 nC
   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 247 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0077 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET HGB080N08SL

HGB080N08SL Datasheet (PDF)

..1. Size:814K cn hunteck
hgb080n08sl hgp080n08sl.pdf

HGB080N08SL , HGP080N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic Level6.0RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capabilityVGS=4.5V8.4RDS(on),typ m Enhanced Avalanche Ruggedness6.3RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg TestedVGS=4.5V8.7RDS(on),typ m Lead Free, Halogen

7.1. Size:924K cn hunteck
hgb080n10al hgp080n10al.pdf

HGB080N10AL , HGP080N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability9RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness7.1RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested9.3RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free85 AID (Sillico

7.2. Size:915K cn hunteck
hgb080n10a hgp080n10a.pdf

, P-1HGB080N10AHGP080N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 7.6RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 7.6RDS(on),typ mW Enhanced Avalanche Ruggedness84.3 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching

9.1. Size:1212K cn hunteck
hgb088n15s hgp088n15s.pdf

HGB088N15S HGP088N15S, P-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching 7.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 113 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching a

9.2. Size:852K cn hunteck
hgb082n10m hgp082n10m.pdf

,HGB082N10M HGP082N10M P-1100V N-Ch Power MOSFET100 VFeature VDSTO-263 6.1RDS(on),typ m Optimized for high speed smooth switchingTO-220 6.4RDS(on),typ m Enhanced Body diode dv/dt capability100 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSDrain Hard Switchin

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