All MOSFET. HGB080N08SL Datasheet

 

HGB080N08SL Datasheet and Replacement


   Type Designator: HGB080N08SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 247 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0077 Ohm
   Package: TO-263
 

 HGB080N08SL substitution

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HGB080N08SL Datasheet (PDF)

 ..1. Size:814K  cn hunteck
 hgb080n08sl hgp080n08sl.pdf pdf_icon

HGB080N08SL

HGB080N08SL , HGP080N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic Level6.0RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capabilityVGS=4.5V8.4RDS(on),typ m Enhanced Avalanche Ruggedness6.3RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg TestedVGS=4.5V8.7RDS(on),typ m Lead Free, Halogen

 7.1. Size:924K  cn hunteck
 hgb080n10al hgp080n10al.pdf pdf_icon

HGB080N08SL

HGB080N10AL , HGP080N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability9RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness7.1RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested9.3RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free85 AID (Sillico

 7.2. Size:915K  cn hunteck
 hgb080n10a hgp080n10a.pdf pdf_icon

HGB080N08SL

, P-1HGB080N10AHGP080N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 7.6RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 7.6RDS(on),typ mW Enhanced Avalanche Ruggedness84.3 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching

 9.1. Size:1212K  cn hunteck
 hgb088n15s hgp088n15s.pdf pdf_icon

HGB080N08SL

HGB088N15S HGP088N15S, P-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching 7.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 113 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching a

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Datasheet: HGP059N12SL , HGB068N15S , HGP068N15S , HGB070N12S , HGP070N12S , HGB070N15S , HGK070N15S , HGP070N15S , AON7403 , HGP080N08SL , HGB080N10A , HGP080N10A , HGB080N10AL , HGP080N10AL , HGB082N10M , HGP082N10M , HGB088N15S .

History: BUK98150-55A | FDS7066N7 | BUK9612-55B | TPM2009EP3 | 2SK2311 | TPCP8J01 | AP9976GM

Keywords - HGB080N08SL MOSFET datasheet

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