HGB082N10M Todos los transistores

 

HGB082N10M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGB082N10M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 176 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 290 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0079 Ohm
   Paquete / Cubierta: TO-263
 

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HGB082N10M Datasheet (PDF)

 ..1. Size:852K  cn hunteck
 hgb082n10m hgp082n10m.pdf pdf_icon

HGB082N10M

,HGB082N10M HGP082N10M P-1100V N-Ch Power MOSFET100 VFeature VDSTO-263 6.1RDS(on),typ m Optimized for high speed smooth switchingTO-220 6.4RDS(on),typ m Enhanced Body diode dv/dt capability100 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSDrain Hard Switchin

 9.1. Size:1212K  cn hunteck
 hgb088n15s hgp088n15s.pdf pdf_icon

HGB082N10M

HGB088N15S HGP088N15S, P-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching 7.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 113 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching a

 9.2. Size:924K  cn hunteck
 hgb080n10al hgp080n10al.pdf pdf_icon

HGB082N10M

HGB080N10AL , HGP080N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability9RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness7.1RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested9.3RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free85 AID (Sillico

 9.3. Size:814K  cn hunteck
 hgb080n08sl hgp080n08sl.pdf pdf_icon

HGB082N10M

HGB080N08SL , HGP080N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic Level6.0RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capabilityVGS=4.5V8.4RDS(on),typ m Enhanced Avalanche Ruggedness6.3RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg TestedVGS=4.5V8.7RDS(on),typ m Lead Free, Halogen

MOSTRAR MÁS

Otros transistores... HGK070N15S , HGP070N15S , HGB080N08SL , HGP080N08SL , HGB080N10A , HGP080N10A , HGB080N10AL , HGP080N10AL , 2N7002 , HGP082N10M , HGB088N15S , HGP088N15S , HGB090N06SL , HGP090N06SL , HGB095NE4SL , HGP095NE4SL , HGB098N10A .

History: IRFSL7430PBF | SVG086R0NSTR | AFN2304

 

 
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