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HGB082N10M Spec and Replacement


   Type Designator: HGB082N10M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0079 Ohm
   Package: TO-263

 HGB082N10M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGB082N10M Specs

 ..1. Size:852K  cn hunteck
 hgb082n10m hgp082n10m.pdf pdf_icon

HGB082N10M

, HGB082N10M HGP082N10M P-1 100V N-Ch Power MOSFET 100 V Feature VDS TO-263 6.1 RDS(on),typ m Optimized for high speed smooth switching TO-220 6.4 RDS(on),typ m Enhanced Body diode dv/dt capability 100 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Drain Hard Switchin... See More ⇒

 9.1. Size:1212K  cn hunteck
 hgb088n15s hgp088n15s.pdf pdf_icon

HGB082N10M

HGB088N15S HGP088N15S , P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching 7.9 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 113 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching a... See More ⇒

 9.2. Size:924K  cn hunteck
 hgb080n10al hgp080n10al.pdf pdf_icon

HGB082N10M

HGB080N10AL , HGP080N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 6.9 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 9 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 7.1 RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested 9.3 RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free 85 A ID (Sillico... See More ⇒

 9.3. Size:814K  cn hunteck
 hgb080n08sl hgp080n08sl.pdf pdf_icon

HGB082N10M

HGB080N08SL , HGP080N08SL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic Level 6.0 RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capability VGS=4.5V 8.4 RDS(on),typ m Enhanced Avalanche Ruggedness 6.3 RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg Tested VGS=4.5V 8.7 RDS(on),typ m Lead Free, Halogen... See More ⇒

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Detailed specifications: HGK070N15S , HGP070N15S , HGB080N08SL , HGP080N08SL , HGB080N10A , HGP080N10A , HGB080N10AL , HGP080N10AL , MMIS60R580P , HGP082N10M , HGB088N15S , HGP088N15S , HGB090N06SL , HGP090N06SL , HGB095NE4SL , HGP095NE4SL , HGB098N10A .

History: HGB088N15S | AGMH12N10C | AGMH6018C | HGP195N15S | UPA2766T1A

Keywords - HGB082N10M MOSFET specs

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