HGB088N15S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGB088N15S
Código: GB088N15S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 273 W
Voltaje máximo drenador - fuente |Vds|: 150 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 113 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 52 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 333 pF
Resistencia entre drenaje y fuente RDS(on): 0.0088 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de MOSFET HGB088N15S
HGB088N15S Datasheet (PDF)
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