HGB088N15S Datasheet. Specs and Replacement

Type Designator: HGB088N15S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 273 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 113 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 333 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm

Package: TO-263

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HGB088N15S datasheet

 ..1. Size:1212K  cn hunteck
 hgb088n15s hgp088n15s.pdf pdf_icon

HGB088N15S

HGB088N15S HGP088N15S , P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching 7.9 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 113 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching a... See More ⇒

 9.1. Size:924K  cn hunteck
 hgb080n10al hgp080n10al.pdf pdf_icon

HGB088N15S

HGB080N10AL , HGP080N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 6.9 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 9 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 7.1 RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested 9.3 RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free 85 A ID (Sillico... See More ⇒

 9.2. Size:814K  cn hunteck
 hgb080n08sl hgp080n08sl.pdf pdf_icon

HGB088N15S

HGB080N08SL , HGP080N08SL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic Level 6.0 RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capability VGS=4.5V 8.4 RDS(on),typ m Enhanced Avalanche Ruggedness 6.3 RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg Tested VGS=4.5V 8.7 RDS(on),typ m Lead Free, Halogen... See More ⇒

 9.3. Size:915K  cn hunteck
 hgb080n10a hgp080n10a.pdf pdf_icon

HGB088N15S

, P-1 HGB080N10A HGP080N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 7.6 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 7.6 RDS(on),typ mW Enhanced Avalanche Ruggedness 84.3 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching ... See More ⇒

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Detailed specifications: HGB080N08SL, HGP080N08SL, HGB080N10A, HGP080N10A, HGB080N10AL, HGP080N10AL, HGB082N10M, HGP082N10M, AO4407A, HGP088N15S, HGB090N06SL, HGP090N06SL, HGB095NE4SL, HGP095NE4SL, HGB098N10A, HGP098N10A, HGB098N10AL

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