SP3900 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SP3900
Código: 3900
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.47 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 4.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 6 nC
Tiempo de subida (tr): 11 nS
Conductancia de drenaje-sustrato (Cd): 63 pF
Resistencia entre drenaje y fuente RDS(on): 0.042 Ohm
Paquete / Cubierta: DFN3X3
Búsqueda de reemplazo de MOSFET SP3900
SP3900 Datasheet (PDF)
sp3900.pdf
GreenProductSP3900aS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.42 @ VGS=10VSuface Mount Package.30V 4.5A74 @ VGS=4.5V D1 D1 D2 D2DFN 3x3PIN1S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA=25C unless oth
sp3901.pdf
GreenProductSP3901aS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.50 @ VGS=10VSuface Mount Package.30V 5.8A80 @ VGS=4.5VD1 D1 D2 D2PIN1PDFN 5x6S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA=25C unless oth
sp3902.pdf
GreenProductSP3902aS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.17 @ VGS=10VSuface Mount Package.30V 10A27 @ VGS=4.5V D1 D1 D2 D2PIN1PDFN 5x6S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA=25C unless oth
sp3903.pdf
GreenProductSP3903aS mHop Microelectronics C orp.Ver 1.4Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.22 @ VGS=10VSuface Mount Package.30V 7.5A32 @ VGS=4.5V D1 D1 D2 D2PIN1PDFN 5x6S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA=25C unless ot
sp3906.pdf
GreenProductSP3906aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.85 @ VGS=10VSuface Mount Package.35V 5A131 @ VGS=4.5VESD Protected.5 4D2 G 26D2 3S 2PIN1D1 7 2 G 18 1D1 S 1PDFN 5x6(TA=
Otros transistores... SP3906 , FDS8870 , SP3903 , FDS8876 , SP3902 , FDS8878 , SP3901 , FDS8880 , IRF1407 , FDS8882 , SP2702 , FDS8884 , SP2700 , FDS8896 , SP2458 , FDS89141 , SP2112 .
Liste
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