SP3900 Todos los transistores

 

SP3900 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SP3900

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.47 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 63 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm

Encapsulados: DFN3X3

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SP3900 datasheet

 ..1. Size:111K  samhop
 sp3900.pdf pdf_icon

SP3900

Green Product SP3900 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 42 @ VGS=10V Suface Mount Package. 30V 4.5A 74 @ VGS=4.5V D1 D1 D2 D2 DFN 3x3 PIN1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless oth

 9.1. Size:111K  samhop
 sp3901.pdf pdf_icon

SP3900

Green Product SP3901 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 50 @ VGS=10V Suface Mount Package. 30V 5.8A 80 @ VGS=4.5V D1 D1 D2 D2 PIN1 PDFN 5x6 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless oth

 9.2. Size:112K  samhop
 sp3902.pdf pdf_icon

SP3900

Green Product SP3902 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 17 @ VGS=10V Suface Mount Package. 30V 10A 27 @ VGS=4.5V D1 D1 D2 D2 PIN1 PDFN 5x6 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless oth

 9.3. Size:113K  samhop
 sp3903.pdf pdf_icon

SP3900

Green Product SP3903 a S mHop Microelectronics C orp. Ver 1.4 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 22 @ VGS=10V Suface Mount Package. 30V 7.5A 32 @ VGS=4.5V D1 D1 D2 D2 PIN1 PDFN 5x6 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless ot

MOSTRAR MÁS

Otros transistores... SP3906 , FDS8870 , SP3903 , FDS8876 , SP3902 , FDS8878 , SP3901 , FDS8880 , 2SK3568 , FDS8882 , SP2702 , FDS8884 , SP2700 , FDS8896 , SP2458 , FDS89141 , SP2112 .

History: S60N15S | FDS8880 | AP4800AGM | RDD020N60 | IRLML6246TRPBF | IRLML6302PBF-1 | SPE7N65G

 

 

 

 

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