SP3900 PDF and Equivalents Search

 

SP3900 Specs and Replacement

Type Designator: SP3900

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.47 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 63 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: DFN3X3

SP3900 substitution

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SP3900 datasheet

 ..1. Size:111K  samhop
 sp3900.pdf pdf_icon

SP3900

Green Product SP3900 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 42 @ VGS=10V Suface Mount Package. 30V 4.5A 74 @ VGS=4.5V D1 D1 D2 D2 DFN 3x3 PIN1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless oth... See More ⇒

 9.1. Size:111K  samhop
 sp3901.pdf pdf_icon

SP3900

Green Product SP3901 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 50 @ VGS=10V Suface Mount Package. 30V 5.8A 80 @ VGS=4.5V D1 D1 D2 D2 PIN1 PDFN 5x6 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless oth... See More ⇒

 9.2. Size:112K  samhop
 sp3902.pdf pdf_icon

SP3900

Green Product SP3902 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 17 @ VGS=10V Suface Mount Package. 30V 10A 27 @ VGS=4.5V D1 D1 D2 D2 PIN1 PDFN 5x6 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless oth... See More ⇒

 9.3. Size:113K  samhop
 sp3903.pdf pdf_icon

SP3900

Green Product SP3903 a S mHop Microelectronics C orp. Ver 1.4 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 22 @ VGS=10V Suface Mount Package. 30V 7.5A 32 @ VGS=4.5V D1 D1 D2 D2 PIN1 PDFN 5x6 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless ot... See More ⇒

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Detailed specifications: SP3906, FDS8870, SP3903, FDS8876, SP3902, FDS8878, SP3901, FDS8880, 2SK3568, FDS8882, SP2702, FDS8884, SP2700, FDS8896, SP2458, FDS89141, SP2112

Keywords - SP3900 MOSFET specs

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