All MOSFET. SP3900 Datasheet

 

SP3900 Datasheet and Replacement


   Type Designator: SP3900
   Marking Code: 3900
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 6 nC
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 63 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: DFN3X3
 

 SP3900 substitution

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SP3900 Datasheet (PDF)

 ..1. Size:111K  samhop
 sp3900.pdf pdf_icon

SP3900

GreenProductSP3900aS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.42 @ VGS=10VSuface Mount Package.30V 4.5A74 @ VGS=4.5V D1 D1 D2 D2DFN 3x3PIN1S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA=25C unless oth

 9.1. Size:111K  samhop
 sp3901.pdf pdf_icon

SP3900

GreenProductSP3901aS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.50 @ VGS=10VSuface Mount Package.30V 5.8A80 @ VGS=4.5VD1 D1 D2 D2PIN1PDFN 5x6S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA=25C unless oth

 9.2. Size:112K  samhop
 sp3902.pdf pdf_icon

SP3900

GreenProductSP3902aS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.17 @ VGS=10VSuface Mount Package.30V 10A27 @ VGS=4.5V D1 D1 D2 D2PIN1PDFN 5x6S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA=25C unless oth

 9.3. Size:113K  samhop
 sp3903.pdf pdf_icon

SP3900

GreenProductSP3903aS mHop Microelectronics C orp.Ver 1.4Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.22 @ VGS=10VSuface Mount Package.30V 7.5A32 @ VGS=4.5V D1 D1 D2 D2PIN1PDFN 5x6S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA=25C unless ot

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Datasheet: SP3906 , FDS8870 , SP3903 , FDS8876 , SP3902 , FDS8878 , SP3901 , FDS8880 , 5N65 , FDS8882 , SP2702 , FDS8884 , SP2700 , FDS8896 , SP2458 , FDS89141 , SP2112 .

History: IXTH6N80 | LSH65R650HT

Keywords - SP3900 MOSFET datasheet

 SP3900 cross reference
 SP3900 equivalent finder
 SP3900 lookup
 SP3900 substitution
 SP3900 replacement

 

 
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