HGD040N06SL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGD040N06SL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 70 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 1200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET HGD040N06SL
Principales características: HGD040N06SL
hgd040n06sl hgi040n06sl.pdf
HGD040N06SL HGI040N06SL P-1 , 60V N-Ch Power MOSFET 60 V VDS Feature 3.3 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 132 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 70 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Applica
hgd040n06s.pdf
P-1 HGD040N06S 60V N-Ch Power MOSFET 60 V VDS Feature 3.4 RDS(on),typ mW Optimized for high speed switching 144 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 70 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switchi
hgd046ne6a.pdf
P-1 HGD046NE6A 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 4 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 101 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit Pin2
hgd045ne4sl.pdf
HGD045NE4SL P-1 45V N-Ch Power MOSFET 45 V VDS Feature 3.5 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.6 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 114 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 70 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Syn
Otros transistores... HGP640N25S , HGD028NE6A , HGD028NE6AL , HGD029NE4SL , HGD032NE4S , HGD035N08A , HGD035N08AL , HGD040N06S , 10N65 , HGI040N06SL , HGD045NE4SL , HGD046NE6A , HGD046NE6AL , HGD050N10A , HGD053N06S , HGD053N06SL , HGI053N06SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP3100A | AP30P06K | AP30P06 | AP30N04K | AP30N03K | AP30H80K | AP30H60K | AP30H220G | AP30H180K | AP30H150Q | AP30H150K | AP30H150G | AP3065SD | AP3004S | AP3003 | AP3002S
Popular searches
2sc2525 | tip73 | 2n3392 | 2n2369a | 2sc733 | a933 transistor | d209l | irfb4321