HGD040N06SL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGD040N06SL
Marking Code: GD040N06SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 49 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 1200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO-252
HGD040N06SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGD040N06SL Datasheet (PDF)
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