HGD046NE6AL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGD046NE6AL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 94 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 101 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 870 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET HGD046NE6AL
Principales características: HGD046NE6AL
hgd046ne6al.pdf
P-1 HGD046NE6AL 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic level 3.8 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 5.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 101 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain
hgd046ne6a.pdf
P-1 HGD046NE6A 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 4 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 101 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit Pin2
hgd045ne4sl.pdf
HGD045NE4SL P-1 45V N-Ch Power MOSFET 45 V VDS Feature 3.5 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.6 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 114 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 70 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Syn
hgd040n06sl hgi040n06sl.pdf
HGD040N06SL HGI040N06SL P-1 , 60V N-Ch Power MOSFET 60 V VDS Feature 3.3 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 132 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 70 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Applica
Otros transistores... HGD032NE4S , HGD035N08A , HGD035N08AL , HGD040N06S , HGD040N06SL , HGI040N06SL , HGD045NE4SL , HGD046NE6A , AO3407 , HGD050N10A , HGD053N06S , HGD053N06SL , HGI053N06SL , HGD058N08SL , HGD059N08A , HGI059N08A , HGD059N08AL .
History: 2N60F
History: 2N60F
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