HGD046NE6AL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGD046NE6AL
Código: GD046NE6AL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 94 W
Voltaje máximo drenador - fuente |Vds|: 65 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 101 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.4 V
Carga de la puerta (Qg): 41 nC
Tiempo de subida (tr): 8 nS
Conductancia de drenaje-sustrato (Cd): 870 pF
Resistencia entre drenaje y fuente RDS(on): 0.0046 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET HGD046NE6AL
HGD046NE6AL Datasheet (PDF)
hgd046ne6al.pdf
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hgd046ne6a.pdf
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