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HGD046NE6AL Spec and Replacement


   Type Designator: HGD046NE6AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 94 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 101 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 870 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: TO-252

 HGD046NE6AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGD046NE6AL Specs

 ..1. Size:898K  cn hunteck
hgd046ne6al.pdf pdf_icon

HGD046NE6AL

P-1 HGD046NE6AL 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic level 3.8 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 5.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 101 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain ... See More ⇒

 4.1. Size:898K  cn hunteck
hgd046ne6a.pdf pdf_icon

HGD046NE6AL

P-1 HGD046NE6A 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 4 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 101 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit Pin2... See More ⇒

 9.1. Size:818K  cn hunteck
hgd045ne4sl.pdf pdf_icon

HGD046NE6AL

HGD045NE4SL P-1 45V N-Ch Power MOSFET 45 V VDS Feature 3.5 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.6 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 114 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 70 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Syn... See More ⇒

 9.2. Size:894K  cn hunteck
hgd040n06sl hgi040n06sl.pdf pdf_icon

HGD046NE6AL

HGD040N06SL HGI040N06SL P-1 , 60V N-Ch Power MOSFET 60 V VDS Feature 3.3 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 132 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 70 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Applica... See More ⇒

Detailed specifications: HGD032NE4S , HGD035N08A , HGD035N08AL , HGD040N06S , HGD040N06SL , HGI040N06SL , HGD045NE4SL , HGD046NE6A , AO3407 , HGD050N10A , HGD053N06S , HGD053N06SL , HGI053N06SL , HGD058N08SL , HGD059N08A , HGI059N08A , HGD059N08AL .

Keywords - HGD046NE6AL MOSFET specs

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