FDS89141 Todos los transistores

 

FDS89141 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS89141

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 1.4 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.062 Ohm

Encapsulados: SO-8

 Búsqueda de reemplazo de FDS89141 MOSFET

- Selecciónⓘ de transistores por parámetros

 

FDS89141 datasheet

 ..1. Size:240K  fairchild semi
fds89141.pdf pdf_icon

FDS89141

December 2010 FDS89141 Dual N-Channel PowerTrench MOSFET 100 V, 3.5 A, 62 m Features General Description Max rDS(on) = 62 m at VGS = 10 V, ID = 3.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 100 m at VGS = 6 V, ID = 2.8 A been optimized for rDS(on), switching performance and High performan

 ..2. Size:373K  onsemi
fds89141.pdf pdf_icon

FDS89141

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:277K  fairchild semi
fds89161lz.pdf pdf_icon

FDS89141

June 2011 FDS89161LZ Dual N-Channel PowerTrench MOSFET 100 V, 2.7 A, 105 m Features General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 2.7 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor s advanced Power Trench process Max rDS(on) = 160 m at VGS = 4.5 V, ID = 2.1 A that has been special tailored to minimize the on-state High

 8.2. Size:260K  fairchild semi
fds89161.pdf pdf_icon

FDS89141

June 2011 FDS89161 Dual N-Channel PowerTrench MOSFET 100 V, 2.7 A, 105 m Features General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 171 m at VGS = 6 V, ID = 2.1 A been optimized for rDS(on), switching performance and High performance

Otros transistores... FDS8880 , SP3900 , FDS8882 , SP2702 , FDS8884 , SP2700 , FDS8896 , SP2458 , 20N50 , SP2112 , FDS89161 , SP2110 , FDS89161LZ , SP2108 , FDS8928A , SP2107 , SP2106 .

History: LSE65R125HT | JMSL1040AGQ | FDMC8882 | SL9435A | 2SJ332S | NTMFS4823N | J330

 

 

 


History: LSE65R125HT | JMSL1040AGQ | FDMC8882 | SL9435A | 2SJ332S | NTMFS4823N | J330

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10

 

 

 

Popular searches

sw50n06 | 2sa1232 | 2sc1940 | ftp08n06a | 2n3405 | 2n3567 | 2sc1226 | 2sd180

 

 

↑ Back to Top
.