Справочник MOSFET. FDS89141

 

FDS89141 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDS89141
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 1.4 ns
   Cossⓘ - Выходная емкость: 70 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.062 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для FDS89141

 

 

FDS89141 Datasheet (PDF)

 ..1. Size:240K  fairchild semi
fds89141.pdf

FDS89141
FDS89141

December 2010FDS89141Dual N-Channel PowerTrench MOSFET 100 V, 3.5 A, 62 mFeatures General Description Max rDS(on) = 62 m at VGS = 10 V, ID = 3.5 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 100 m at VGS = 6 V, ID = 2.8 A been optimized for rDS(on), switching performance and High performan

 ..2. Size:373K  onsemi
fds89141.pdf

FDS89141
FDS89141

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:277K  fairchild semi
fds89161lz.pdf

FDS89141
FDS89141

June 2011FDS89161LZDual N-Channel PowerTrench MOSFET 100 V, 2.7 A, 105 mFeatures General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 2.7 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process Max rDS(on) = 160 m at VGS = 4.5 V, ID = 2.1 A that has been special tailored to minimize the on-state High

 8.2. Size:260K  fairchild semi
fds89161.pdf

FDS89141
FDS89141

June 2011FDS89161Dual N-Channel PowerTrench MOSFET 100 V, 2.7 A, 105 mFeatures General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 2.7 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 171 m at VGS = 6 V, ID = 2.1 A been optimized for rDS(on), switching performance and High performance

 8.3. Size:394K  onsemi
fds89161lz.pdf

FDS89141
FDS89141

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.4. Size:393K  onsemi
fds89161.pdf

FDS89141
FDS89141

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.5. Size:2683K  kexin
fds89161.pdf

FDS89141
FDS89141

SMD Type MOSFETN-Channel Enhancement MOSFET FDS89161 (KDS89161)SOP-8 Features VDS (V) = 100V ID = 2.7 A RDS(ON) 105m (VGS = 10V)1.50 0.15 RDS(ON) 160m (VGS = 4.5V) High performance trench technology for extremely low rDS(on) CDM ESD Protection Level > 2KV typicalG2D25 4D2 S2Q26 3D1 G17 2Q1D1 8 1S1atings Ta = 25

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