FDS89141. Аналоги и основные параметры
Наименование производителя: FDS89141
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1.6 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 1.4 ns
Cossⓘ - Выходная емкость: 70 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.062 Ohm
Тип корпуса: SO-8
Аналог (замена) для FDS89141
- подборⓘ MOSFET транзистора по параметрам
FDS89141 даташит
fds89141.pdf
December 2010 FDS89141 Dual N-Channel PowerTrench MOSFET 100 V, 3.5 A, 62 m Features General Description Max rDS(on) = 62 m at VGS = 10 V, ID = 3.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 100 m at VGS = 6 V, ID = 2.8 A been optimized for rDS(on), switching performance and High performan
fds89141.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fds89161lz.pdf
June 2011 FDS89161LZ Dual N-Channel PowerTrench MOSFET 100 V, 2.7 A, 105 m Features General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 2.7 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor s advanced Power Trench process Max rDS(on) = 160 m at VGS = 4.5 V, ID = 2.1 A that has been special tailored to minimize the on-state High
fds89161.pdf
June 2011 FDS89161 Dual N-Channel PowerTrench MOSFET 100 V, 2.7 A, 105 m Features General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 171 m at VGS = 6 V, ID = 2.1 A been optimized for rDS(on), switching performance and High performance
Другие MOSFET... FDS8880 , SP3900 , FDS8882 , SP2702 , FDS8884 , SP2700 , FDS8896 , SP2458 , 20N50 , SP2112 , FDS89161 , SP2110 , FDS89161LZ , SP2108 , FDS8928A , SP2107 , SP2106 .
History: MPG150N10P | IRFU214PBF | SP2108 | MPG120N06S
History: MPG150N10P | IRFU214PBF | SP2108 | MPG120N06S
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