All MOSFET. FDS89141 Datasheet

 

FDS89141 Datasheet and Replacement


   Type Designator: FDS89141
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 1.4 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm
   Package: SO-8
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FDS89141 Datasheet (PDF)

 ..1. Size:240K  fairchild semi
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FDS89141

December 2010FDS89141Dual N-Channel PowerTrench MOSFET 100 V, 3.5 A, 62 mFeatures General Description Max rDS(on) = 62 m at VGS = 10 V, ID = 3.5 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 100 m at VGS = 6 V, ID = 2.8 A been optimized for rDS(on), switching performance and High performan

 ..2. Size:373K  onsemi
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FDS89141

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:277K  fairchild semi
fds89161lz.pdf pdf_icon

FDS89141

June 2011FDS89161LZDual N-Channel PowerTrench MOSFET 100 V, 2.7 A, 105 mFeatures General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 2.7 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process Max rDS(on) = 160 m at VGS = 4.5 V, ID = 2.1 A that has been special tailored to minimize the on-state High

 8.2. Size:260K  fairchild semi
fds89161.pdf pdf_icon

FDS89141

June 2011FDS89161Dual N-Channel PowerTrench MOSFET 100 V, 2.7 A, 105 mFeatures General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 2.7 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 171 m at VGS = 6 V, ID = 2.1 A been optimized for rDS(on), switching performance and High performance

Datasheet: FDS8880 , SP3900 , FDS8882 , SP2702 , FDS8884 , SP2700 , FDS8896 , SP2458 , K2611 , SP2112 , FDS89161 , SP2110 , FDS89161LZ , SP2108 , FDS8928A , SP2107 , SP2106 .

History: STN3N40K3 | AOWF2606 | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003

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