FDS89141 PDF and Equivalents Search

 

FDS89141 Specs and Replacement

Type Designator: FDS89141

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1.4 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm

Package: SO-8

FDS89141 substitution

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FDS89141 datasheet

 ..1. Size:240K  fairchild semi
fds89141.pdf pdf_icon

FDS89141

December 2010 FDS89141 Dual N-Channel PowerTrench MOSFET 100 V, 3.5 A, 62 m Features General Description Max rDS(on) = 62 m at VGS = 10 V, ID = 3.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 100 m at VGS = 6 V, ID = 2.8 A been optimized for rDS(on), switching performance and High performan... See More ⇒

 ..2. Size:373K  onsemi
fds89141.pdf pdf_icon

FDS89141

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 8.1. Size:277K  fairchild semi
fds89161lz.pdf pdf_icon

FDS89141

June 2011 FDS89161LZ Dual N-Channel PowerTrench MOSFET 100 V, 2.7 A, 105 m Features General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 2.7 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor s advanced Power Trench process Max rDS(on) = 160 m at VGS = 4.5 V, ID = 2.1 A that has been special tailored to minimize the on-state High ... See More ⇒

 8.2. Size:260K  fairchild semi
fds89161.pdf pdf_icon

FDS89141

June 2011 FDS89161 Dual N-Channel PowerTrench MOSFET 100 V, 2.7 A, 105 m Features General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 171 m at VGS = 6 V, ID = 2.1 A been optimized for rDS(on), switching performance and High performance... See More ⇒

Detailed specifications: FDS8880, SP3900, FDS8882, SP2702, FDS8884, SP2700, FDS8896, SP2458, 20N50, SP2112, FDS89161, SP2110, FDS89161LZ, SP2108, FDS8928A, SP2107, SP2106

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