SP2108 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SP2108
   Código: 2108
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 3.4 nC
   trⓘ - Tiempo de subida: 41 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.811 Ohm
   Paquete / Cubierta: PDFN5X6

Búsqueda de reemplazo de MOSFET SP2108

SP2108 Datasheet (PDF)

..1. Size:106K samhop
sp2108.pdf

GreenProductSP2108aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.811 @ VGS=10VSuface Mount Package.100V 1.2A932 @ VGS=4.5VESD Protected.5 4D2 G 26D2 3S 2PIN1D1 7 2 G 18 1D1 S 1PDFN 5x6

9.1. Size:119K samhop
sp2102.pdf

GreenProductSP2102aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.100V 2.0A 216 @ VGS=10VSuface Mount Package.D1 D1 D2 D2DFN 3x3PIN1S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted)

9.2. Size:111K samhop
sp2107.pdf

GreenProductSP2107aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () MaxRugged and reliable.0.8 @ VGS=10VSuface Mount Package.100V 1.2A0.93 @ VGS=4.5VESD Protected.5 4D2 G 26 3D2 S 2PIN1D1 7 2 G 18 1D1 S 1PDFN 5x6A

9.3. Size:111K samhop
sp2103.pdf

GreenProductSP2103aS mHop Microelectronics C orp.Ver 1.3Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.220 @ VGS=10VSuface Mount Package.100V 2.2A350 @ VGS=4.5VD1 D1 D2 D2PIN1PDFN 5x6S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA=25C unless

9.4. Size:110K samhop
sp2106.pdf

GreenProductSP2106aS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () MaxRugged and reliable.2.0 @ VGS=10VSuface Mount Package.100V 1A2.4 @ VGS=4.5VESD Protected.5 4D2 G 26 3D2 S 2PIN1D1 7 2 G 18 1D1 S 1PDFN 5x6ABSO

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