SP2108 MOSFET Datasheet: N-Ch, 100V, 1.2A. Full specification with pinout and replacement list

SP2108 Specs and Replacement

   Type Designator: SP2108
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 41 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.811 Ohm
   Package: PDFN5X6

SP2108 substitution

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SP2108 datasheet

..1. Size:106K samhop
sp2108.pdf pdf_icon

Green Product SP2108 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 811 @ VGS=10V Suface Mount Package. 100V 1.2A 932 @ VGS=4.5V ESD Protected. 5 4 D2 G 2 6 D2 3 S 2 PIN1 D1 7 2 G 1 8 1 D1 S 1 PDFN 5x6 ... See More ⇒

9.1. Size:119K samhop
sp2102.pdf pdf_icon

Green Product SP2102 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 100V 2.0A 216 @ VGS=10V Suface Mount Package. D1 D1 D2 D2 DFN 3x3 PIN1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) ... See More ⇒

9.2. Size:111K samhop
sp2107.pdf pdf_icon

Green Product SP2107 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Max Rugged and reliable. 0.8 @ VGS=10V Suface Mount Package. 100V 1.2A 0.93 @ VGS=4.5V ESD Protected. 5 4 D2 G 2 6 3 D2 S 2 PIN1 D1 7 2 G 1 8 1 D1 S 1 PDFN 5x6 A... See More ⇒

9.3. Size:111K samhop
sp2103.pdf pdf_icon

Green Product SP2103 a S mHop Microelectronics C orp. Ver 1.3 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 220 @ VGS=10V Suface Mount Package. 100V 2.2A 350 @ VGS=4.5V D1 D1 D2 D2 PIN1 PDFN 5x6 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless ... See More ⇒