SP2108 - описание и поиск аналогов

Green Product SP2108 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 811 @ VGS=10V Suface Mount Package. 100V 1.2A 932 @ VGS=4.5V ESD Protected. 5 4 D2 G 2 6 D2 3 S 2 PIN1 D1 7 2 G 1 8 1 D1 S 1 PDFN 5x6

Green Product SP2102 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 100V 2.0A 216 @ VGS=10V Suface Mount Package. D1 D1 D2 D2 DFN 3x3 PIN1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)

Green Product SP2107 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Max Rugged and reliable. 0.8 @ VGS=10V Suface Mount Package. 100V 1.2A 0.93 @ VGS=4.5V ESD Protected. 5 4 D2 G 2 6 3 D2 S 2 PIN1 D1 7 2 G 1 8 1 D1 S 1 PDFN 5x6 A

Green Product SP2103 a S mHop Microelectronics C orp. Ver 1.3 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 220 @ VGS=10V Suface Mount Package. 100V 2.2A 350 @ VGS=4.5V D1 D1 D2 D2 PIN1 PDFN 5x6 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless

Green Product SP2106 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Max Rugged and reliable. 2.0 @ VGS=10V Suface Mount Package. 100V 1A 2.4 @ VGS=4.5V ESD Protected. 5 4 D2 G 2 6 3 D2 S 2 PIN1 D1 7 2 G 1 8 1 D1 S 1 PDFN 5x6 ABSO